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Showing 1 to 20 of 109 for “"ALAS"”.
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Implementación de un emprendimiento social: caso ALAS Cambio Social
… por Luciana Mainieri en el trabajo final ALAS Presentación Plan de Negocios, Mayo 2011.
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The Structure of The Short Stories of Leopoldo Alas, 'Clarin'
Made available in DSpace on 2014-12-09T20:08:36Z (GMT). No. of bitstreams: 1 7000799.pdf: 7459006 bytes, checksum: 95efcb98967fa4a9b72c788afa2c1180 (MD5) Previous issue date: 1969
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‘Two Souls Alas…’: Jung’s two personalities and the making of analytical psychology
The thesis falls into two parts. The first examines Jung’s two personalities, as described in his memoir, Memories, Dreams, Reflections. The argument is that Jung’s experience of the dynamic between the two personalities informs basic principles behind, first the development of Jung’s psychological …
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Interface roughness mediated optical decay and carrier dynamics in type II AlAs/GaAs heterostructures
… as a possible decay mechanism in type II AlAs/GaAs heterostructures. Photoluminescence (PL) has been the primary tool used to study type II AlAs/GaAs heterostructures, and can be expected to be strongly influenced by interface roughness both through the carriers' mobility and their decay …
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El uso de la literatura digital en el aula de ELE. Experiencia didáctica: Vamos a dar alas a nuestra imaginación
Como docentes, siempre necesitamos buscar nuevas maneras de motivar a los estudiantes, teniendo en cuenta su realidad, sus necesidades e intereses. En este trabajo partimos de la realidad hoy en día, que implica el desarrollo continúo de tecnologías de información y comunicación (TIC), cuya mayor …
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PLP-Dependent α-Oxoamine Synthases: Phylogenetic Analysis, Structural Plasticity, and Structure-Function Studies on 5-Aminolevulinate Synthase
5-Aminolevulinate synthase (ALAS) and 8-amino-7-oxononanoate synthase (AONS) are two of four homodimeric members of the alpha-oxoamine synthase family of pyridoxal 5'-phosphate (PLP)-dependent enzymes. The evolutionary relationships among α-oxoamine synthases representing a broad taxonomic and …
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Investigation of implantation damage in aluminum gallium arsenide/gallium arsenide heterostructures using ion channeling and transmission electron microscopy
… model can also account for results in the GaAs/AlAs system, such as the greater amount of mixing which is observed to occur at deeper AlAs interfaces and also that amorphization of AlAs layers initiates at the interfaces.
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Modulated Reflectance and Photoluminescence Spectroscopy of Epitaxial InGaAs Quantum Dot Structures /
… InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, …
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Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor
… of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.
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Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications
… high electron and high hole mobility. Recently, AlAs/GaAs epilayers were demonstrated as a potential buffer platform for next-generation Ge-based electronics integrated on Si substrate. This research systematically investigates the structural characteristics of the Ge epitaxial layer …
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Investigating inhibition of porphyrin (heme) synthesis as a novel treatment option for prostate cancer
… the first step in heme synthesis, performed by ALAS 1 or 2. ALAS 2 T was able to be purified in Rosetta cells in a pET28a vector and ALAS 1 T was expressed in pET21a vector in T7 shuffle cells. Heme synthesis was further validated as a novel therapeutic target for PC and the successful …
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I. Raman scattering and x-ray diffraction study of annealing effects on confined LO and folded LA phonons in gallium arsenide-aluminum arsenide superlattices. II. Picosecond light scattering studies of relaxation and tunneling in gallium arsenide/aluminum(x)gallium(1-x)arsenide multiple quantum well structures
… to probe the vibrational properties of GaAs/AlAs superlattices and the dynamics of electrons in GaAs/Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As multiple quantum well structures.
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Disorder Effects in Aluminum-Gallium - Arsenide Quantum-Well Heterostructures
… laser properties of Al(,x)Ga(,1-x)As-GaAs (or AlAs-GaAs) quantum-well heterostructures (QWH's) grown by metalorganic chemical vapor deposition (MO-CVD) are investigated. Various forms of disorder in QWH's are studied and compared by employing photoluminescence techniques.
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Diseño, cálculo y comprobación de unión soldada en viga de puente grúa de alma doble
… la unión soldada en ángulo entre las almas y las alas. Las características químicas‐mecánicas del metal base de las almas y las alas, y la geometría del cordón han permitido elegir un tipo de electrodo (metal de aporte) adecuado y el cálculo de los parámetros tecnológicos del proceso de soldeo. …
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Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers
… of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\sp\circ$C for 3 h in a N$\sb2$ + H$\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the …
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Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers
… heterostructure (QWH) laser diodes and on AlAs-GaAs and Al(,x)Ga(,1-x)As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting In(,1-x)Ga(,x)P-In(,1-x)Ga(,x)P(,1-z)As(,z) heterostructures grown on GaAs(,1-y)P(,y) substrates are discussed.
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Desarrollo de detectores de infrarrojo fotovoltaicos, de pozo cuántico y doble barrera, para la banda de 3-5 um
… una primera barrera interna delgada (~20 Å de AlAs, generalmente); y una segunda barrera exterior, más gruesa (~300 Å) formada por otro material con menor gap (AlGaAs, por ejemplo). En nuestro caso, la mayor parte de los detectores estudiados (con la excepción de los detectores con (In)GaAsN en …
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I. Raman scattering and x-ray diffraction study of annealing effects on confined LO and folded LA phonons in GaAs-AlAs superlattices ; II. Picosecond light scattering studies of relaxation and tunneling in GaAs/AlxGa1-xAs mulitple quatum well structures
… to probe the vibrational properties ofGaAs/AlAs superlattices and the dynamics of electrons in GaAs/AlxGal-xAs multiple quantum well structures. In our study of the effects of annealing on a short-period GaAs/ AlAs superlattice we have used Raman scattering in conjunction with x-ray …
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Enhanced performance of optical sources in III-V materials using photonic crystals
… 3 develops methods of laterally steam oxidizing AlAs into A1203 to form large-area wide stop-band one-dimensional Al203/GaAs photonic crystals. The mechanical stability of the high-dielectric contrast interface determines the quality of the photonic crystal and is therefore explored in detail by …
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