Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/helium Discharges

The electron density in helium and silane/helium glow discharge plasmas was measured in a hollow cathode discharge using microwave diagnostic techniques. When silane is added to the discharge gas, the electron density is drastically reduced, which is attributed to dissociative attachment to a product of the dissociation of the parent silane molecules, either SiH(,2) or SiH(,3). The rate coefficient for the dissociative attachment process was determined to be 2.65 x 10('-10) cm('3)/sec. This indicates that the attachment of electrons by silane fragments is an important kinetic process in silane discharges, and should be considered in models of the glow discharge deposition process.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Fleddermann, Charles Byrns

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8600179

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69317