{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69317"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69317","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/helium Discharges","abstract":"The electron density in helium and silane/helium glow discharge plasmas was measured in a hollow cathode discharge using microwave diagnostic techniques. When silane is added to the discharge gas, the electron density is drastically reduced, which is attributed to dissociative attachment to a product of the dissociation of the parent silane molecules, either SiH(,2) or SiH(,3). The rate coefficient for the dissociative attachment process was determined to be 2.65 x 10('-10) cm('3)/sec. This indicates that the attachment of electrons by silane fragments is an important kinetic process in silane discharges, and should be considered in models of the glow discharge deposition process.","abstract_html":"The electron density in helium and silane/helium glow discharge plasmas was measured in a hollow cathode discharge using microwave diagnostic techniques. When silane is added to the discharge gas, the electron density is drastically reduced, which is attributed to dissociative attachment to a product of the dissociation of the parent silane molecules, either SiH(,2) or SiH(,3). The rate coefficient for the dissociative attachment process was determined to be 2.65 x 10('-10) cm('3)/sec. This indicates that the attachment of electrons by silane fragments is an important kinetic process in silane discharges, and should be considered in models of the glow discharge deposition process.","abstract_has_math":false,"creators":["Fleddermann, Charles Byrns"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:00Z","date_published":"2014-12-15T19:05:00Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8600179"],"render_values":[{"text":"(UMI)AAI8600179","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69317","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Fleddermann, Charles Byrns"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:00Z","10000-01-01","1985"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69317","(UMI)AAI8600179"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The electron density in helium and silane/helium glow discharge plasmas was measured in a hollow cathode discharge using microwave diagnostic techniques. When silane is added to the discharge gas, the electron density is drastically reduced, which is attributed to dissociative attachment to a product of the dissociation of the parent silane molecules, either SiH(,2) or SiH(,3). The rate coefficient for the dissociative attachment process was determined to be 2.65 x 10('-10) cm('3)/sec. This indicates that the attachment of electrons by silane fragments is an important kinetic process in silane discharges, and should be considered in models of the glow discharge deposition process.","Made available in DSpace on 2014-12-15T19:05:00Z (GMT). No. of bitstreams: 1 8600179.pdf: 1671296 bytes, checksum: 238ade99fac57925157afc5291077af0 (MD5) Previous issue date: 1985","Embargo set by: Seth Robbins for item 69483 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","68 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985."]},{"key":"dc:title","label":"Title","values":["Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/helium Discharges"]}]}],"canonical_facts":{"dc:creator":["Fleddermann, Charles Byrns"],"dc:date":["2014-12-15T19:05:00Z","10000-01-01","1985"],"dc:description":["The electron density in helium and silane/helium glow discharge plasmas was measured in a hollow cathode discharge using microwave diagnostic techniques. When silane is added to the discharge gas, the electron density is drastically reduced, which is attributed to dissociative attachment to a product of the dissociation of the parent silane molecules, either SiH(,2) or SiH(,3). The rate coefficient for the dissociative attachment process was determined to be 2.65 x 10('-10) cm('3)/sec. This indicates that the attachment of electrons by silane fragments is an important kinetic process in silane discharges, and should be considered in models of the glow discharge deposition process.","Made available in DSpace on 2014-12-15T19:05:00Z (GMT). No. of bitstreams: 1 8600179.pdf: 1671296 bytes, checksum: 238ade99fac57925157afc5291077af0 (MD5) Previous issue date: 1985","Embargo set by: Seth Robbins for item 69483 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","68 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985."],"dc:identifier":["http://hdl.handle.net/2142/69317","(UMI)AAI8600179"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/helium Discharges"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}