Quantum well devices fabricated using selective area growth and their application in optical fiber communication

In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Liudvih, Pavel

Contributors dc:contributor

• Coleman, James J.

• Selective area epitaxy (SAE)
• Selective area growth (SAG)
• integrated modulator
• Metalorganic chemical vapor deposition (MOCVD)
• quantum well.

Statement dc:rights

• Copyright 2013 Pavel Liudvih

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/46625

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/46625