Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 32 for “"Selective-Area"”.
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Nanoscale Selective Area Epitaxy for Optoelectronic Devices
… the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The …
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Selective area chemical vapor deposition of graphene
… and develop a new graphene growth method called selective area chemical vapor deposition of graphene (SACVD). This SACVD method is a one-step seed-free method that can synthesize graphene on selective areas of the copper catalytic substrate by using a quartz mask. We study the growth model of the …
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Selective area synthesis of 3-D carbon nanotube forest microsctructures
… CNT forest microstructures are engineered by selectively activating CNT growth on specific regions of a patterned substrate. The process is realized using a combination of two distinct chemical vapor deposition (CVD) processes in concert with silicon substrates independently patterned with …
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III-V compound semiconductor selective area epitaxy on silicon substrates
… to achieve optical data transmission on chip. Selective area epitaxy is an MOCVD/MBE growth method that deposits high quality epitaxial materials on selected substrate surface areas. The selectivity is achieved by using SiO2 or Si3N4 as a growth mask, so that epitaxial growth only happens on …
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Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a …
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We …
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Design and Characterization of Integrated Photonic Devices Fabricated Using Selective-Area Epitaxy and Distributed Bragg Reflector Surface Gratings
The second challenge involved with the fabricating of integrated photonic devices is the formation of integrable high-Q cavities. The optical feedback in most laser diodes is provided by cleaved facets. Unfortunately, cleaved facets are not an option when designing integrated photonic devices. …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
This thesis work presents a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. …
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Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… through innovative designs compatible with a selective-area processing (SAP) technique avoiding both ICP-RIE and ion-implantation. To alleviate the shortcomings in GaN power device ET schemes, novel ET schemes capable of providing ideal parallel-plane breakdown are developed and presented. …
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Epitaxy of Self -Assembled Nanostructures by Metalorganic Chemical Vapor Deposition
… of self-assembled nanostructures lies in the selective placement of individual nanostructures for applications such as integrated optoelectronics, quantum computing and quantum encryption. By utilizing InGaAs thin films, a method of selective area epitaxy has been developed. Not only is the …
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Aspects of Adhesion of Metallised Plastics.
… been overcome by careful design in the use of selective area plating, whilst retaining certain other desirable composite properties...
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Strained-Layer Indium Gallium Arsenide-Gallium Arsenide-Aluminum Galium Arsenide Photonic Devices by Metalorganic Chemical Vapor Deposition
… and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… FET devices. For the first time, the PAMBE-based selective-area growth (SAG) technique is demonstrated to improve the properties of the ohmic contacts for n-GaN and AlGaN. Employing this technique, high-performance GaN MESFETs and HEMTs are fabricated and characterized.
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Development of the recess mounting with monolithic metallization optoelectronic integrated circuit technology for optical clock distribution applications
… lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (under 3500C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns. In the OPA technique, optoelectronic …
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STUDY OF THE SELECTIVE GROWTH OF THIN FILMS: EFFECTS OF A THIRD SPECIES IN ATOMIC LAYER DEPOSITION
… advantages, ALD is a good candidate to achieve selective area deposition for future semiconductor devices. Previous research has been conducted using solution-phase site-blocking layers and/or photolithography for patterning. In this thesis, a process that is more compatible with existing …
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Engineering superconductivity in ballistic semiconductor nanowires
… quantum wires through the development of selective-area epitaxy of Al to InSb nanowires. Epitaxial InSb–Al devices generically possess a BCS-like superconducting gap in tunneling measurements and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in …
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