{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/46625"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/46625","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Quantum well devices fabricated using selective area growth and their application in optical fiber communication","abstract":"In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.","abstract_html":"In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.","abstract_has_math":false,"creators":["Liudvih, Pavel"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Coleman, James J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-01-16T17:56:38Z","date_published":"2014-01-16T17:56:38Z","updated_at":"2026-07-22T22:25:36Z","subjects":["Selective area epitaxy (SAE)","Selective area growth (SAG)","integrated modulator","Metalorganic chemical vapor deposition (MOCVD)","quantum well."],"languages":["en"],"rights":["Copyright 2013 Pavel Liudvih"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/46625","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Coleman, James J."]},{"key":"dc:creator","label":"Author","values":["Liudvih, Pavel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-01-16T17:56:38Z","2013-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Selective area epitaxy (SAE)","Selective area growth (SAG)","integrated modulator","Metalorganic chemical vapor deposition (MOCVD)","quantum well."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2013 Pavel Liudvih"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/46625"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:51:09Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liudvih_Pavel.pdf: 1989784 bytes, checksum: 7ad449ed8dff3b3e24d5a9d624ba831d (MD5)","Made available in DSpace on 2014-01-16T17:56:38Z (GMT). No. of bitstreams: 2 Pavel_Liudvih.pdf: 1232799 bytes, checksum: 126e7a90ea0cd3853bfa6cc149cf8b2d (MD5) license.txt: 4063 bytes, checksum: 0f656c6ac6f31fe242f31f9f562e01f7 (MD5)"]},{"key":"dc:title","label":"Title","values":["Quantum well devices fabricated using selective area growth and their application in optical fiber communication"]}]}],"canonical_facts":{"dc:contributor":["Coleman, James J."],"dc:creator":["Liudvih, Pavel"],"dc:date":["2014-01-16T17:56:38Z","2013-12"],"dc:description":["In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:51:09Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liudvih_Pavel.pdf: 1989784 bytes, checksum: 7ad449ed8dff3b3e24d5a9d624ba831d (MD5)","Made available in DSpace on 2014-01-16T17:56:38Z (GMT). No. of bitstreams: 2 Pavel_Liudvih.pdf: 1232799 bytes, checksum: 126e7a90ea0cd3853bfa6cc149cf8b2d (MD5) license.txt: 4063 bytes, checksum: 0f656c6ac6f31fe242f31f9f562e01f7 (MD5)"],"dc:identifier":["http://hdl.handle.net/2142/46625"],"dc:language":["en"],"dc:rights":["Copyright 2013 Pavel Liudvih"],"dc:subject":["Selective area epitaxy (SAE)","Selective area growth (SAG)","integrated modulator","Metalorganic chemical vapor deposition (MOCVD)","quantum well."],"dc:title":["Quantum well devices fabricated using selective area growth and their application in optical fiber communication"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:36Z"}