Planar nanowire high electron mobility transistor and down-scaling of planar nanowire

Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical non-uniformity issues in VLS grown NW-FETs with doped NW channels. Growth optimization through mapping the parameters of group III flow, V/III ratio and temperature has also been successfully done for the realization of high-quality down-scaled planar GaAs NWs with widths as small as 35 nm. With further development of our planar NW technology, wafer-scale low-power and high-speed VLSI circuits involving 3D planar NW channel from the bottom-up is promising.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2013

Author dc:creator

• Miao, Xin

Contributors dc:contributor

• Li, Xiuling

• Gallium Arsenide (GaAs)
• planar nanowire
• High Electron Mobility Transistor (HEMT)
• III-V
• Very-large-scale integration (VLSI)
• micro-tube
• resonator

Statement dc:rights

• Copyright 2013 Xin Miao

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/45391

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/45391