Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications

Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2012

Author dc:creator

• Iverson, Eric

Contributors dc:contributor

• Feng, Milton

• Indium Phospide (InP)
• double-heterojunction bipolar transistors (DHBT)
• Type-I
• Type-II
• Type-I/II
• Hot Electron
• Noise Figure
• Linearity
• third-order intercept point (IP3)
• Gain Compression
• Dynamic Range

Statement dc:rights

• Copyright 2012 Eric Iverson

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/31018

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/31018