{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/31018"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/31018","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications","abstract":"Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.","abstract_html":"Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.","abstract_has_math":false,"creators":["Iverson, Eric"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-05","date_published":"2012-05","updated_at":"2026-07-22T22:25:29Z","subjects":["Indium Phospide (InP)","double-heterojunction bipolar transistors (DHBT)","Type-I","Type-II","Type-I/II","Hot Electron","Noise Figure","Linearity","third-order intercept point (IP3)","Gain Compression","Dynamic Range"],"languages":["en"],"rights":["Copyright 2012 Eric Iverson"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/31018","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Iverson, Eric"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-05","2012-05-22T00:21:52Z"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Indium Phospide (InP)","double-heterojunction bipolar transistors (DHBT)","Type-I","Type-II","Type-I/II","Hot Electron","Noise Figure","Linearity","third-order intercept point (IP3)","Gain Compression","Dynamic Range"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2012 Eric Iverson"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/31018"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Dynamic range characterization of double-heterojunction bipolar transistors is examined. 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