Properties of graphene nanoribbons obtained by chemical vapor deposition

We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2012

Author dc:creator

• Lyons, Austin

Contributors dc:contributor

• Pop, Eric

• graphene
• nanoribbons
• chemical vapor deposition (CVD)
• current density
• interconnects
• breakdown
• mobility
• transistors
• chemical vapor deposition

Statement dc:rights

• Copyright 2011 Austin Lyons

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/29653

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/29653