{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/29653"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/29653","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Properties of graphene nanoribbons obtained by chemical vapor deposition","abstract":"We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.","abstract_html":"We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width &lt; ~50 nm and length &lt; ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.","abstract_has_math":false,"creators":["Lyons, Austin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Pop, Eric"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-02-06T20:08:58Z","date_published":"2012-02-06T20:08:58Z","updated_at":"2026-07-22T22:25:27Z","subjects":["graphene","nanoribbons","chemical vapor deposition (CVD)","current density","interconnects","breakdown","mobility","transistors","chemical vapor deposition"],"languages":["en"],"rights":["Copyright 2011 Austin Lyons"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/29653","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Pop, Eric"]},{"key":"dc:creator","label":"Author","values":["Lyons, Austin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-02-06T20:08:58Z","2011-12"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["graphene","nanoribbons","chemical vapor deposition (CVD)","current density","interconnects","breakdown","mobility","transistors","chemical vapor deposition"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2011 Austin Lyons"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/29653"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-12-08T14:54:20Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 MS Thesis v7.docx: 3441206 bytes, checksum: 851b1d13658aaaefa5acff42a286fd39 (MD5) Lyons_Austin.pdf: 1382977 bytes, checksum: f57093d4d2163934cb9745184e86a247 (MD5)","Made available in DSpace on 2012-02-06T20:08:58Z (GMT). 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CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-12-08T14:54:20Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 MS Thesis v7.docx: 3441206 bytes, checksum: 851b1d13658aaaefa5acff42a286fd39 (MD5) Lyons_Austin.pdf: 1382977 bytes, checksum: f57093d4d2163934cb9745184e86a247 (MD5)","Made available in DSpace on 2012-02-06T20:08:58Z (GMT). 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