Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 1035 for “"transistors"”.
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Printed inorganic transistors
… been predicated on the miniaturization of the transistors that comprise integrated circuits. While complexity has greatly increased within a given area of processed silicon, the cost per area has not decreased. Current fabrication methods are further hindered by high facility costs and …
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Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
… compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and …
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Modelling of Multichannel GaN Transistors
The Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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Inorganic semiconductors for printed transistors
CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest …
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Discrete superconducting vortex flow transistors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are …
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Organic Transistors for Life Science Applications
L'abstract è presente nell'allegato / the abstract is in the attachment
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Optoelectronic processes in polyfluorene ambipolar transistors
… taking advantage of recently developed ambipolar transistors where both holes and electrons can be accumulated in the same device a comparison can be made between the negative and positive polaron wavefunctions. Two polyfluorene polymers were chosen as examples where quantum chemical calculations …
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Fully printed transistors employing silicon nanoparticles
… silicon, with the aim of producing fully printed transistors. All of the printed transistors produced to date have been field-effect transistors (FETs), due to the fact that printing processes are easily applicable to the planar FET architectures. The majority of the work in the area of printed …
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Unijunction transistors in a ring counter
Thesis (B.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering, 1959.
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Antimonide-based III-V multigate transistors
As Si CMOS technology advances, alternative channel materials are under extensive investigation to replace or augment Si in future generations of nanoelectronics. III-V compound semiconductors, such as InGaAs and InGaSb are promising candidates as channel materials for MOSFETs as a result of their …
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Hot-electron degradation of bipolar transistors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Development of gallium nitride power transistors
GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in …
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Spin effects in single-electron transistors
… transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With a magnetic field parallel to the motion of the electrons, single-particle energy levels …
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Multi-Kilovolt Gallium Nitride Power Transistors
… GaN devices, particularly high-electron-mobility transistors (HEMTs), has predominantly been confined to the low-voltage domain of typically below 650 volts. This limitation blocks GaN HEMTs for medium- and high-voltage applications such as electric vehicles, renewable energy processing, and power …
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Low-voltage organic transistors with high transconductance
… the development of low-voltage organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of octadecyl phosphonic acid (C18PA) and by increasing the channel width …
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NANOSCALE EFFECTS IN JUNCTIONLESS FIELD EFFECT TRANSISTORS
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using …
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Gate leakage variability in nano-CMOS transistors
… leakage variability in realistic nano-scale CMOS transistors. We adopt a 3D drift-diffusion device simulation approach with density-gradient quantum corrections, as the most established framework for the study of device variability. The simulator is first extended to model the direct tunnelling of …
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Interfacial Studies of Organic Field-Effect Transistors
Organic field-effect transistors (OFETs) are potential components for large-area electronics because of their attractive advantages: light weight, cost-effective and large-area processability, flexibility and resonable performance potential. However, the commercialization of OFETs faces several …
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AlGaN/GaN heterostructures for enhancement mode transistors
Oggigiorno il continuo aumento della domanda di energia elettrica è divenuto un problema globale. Infatti la riduzione del consumo di energia è diventato il compito principale della moderna elettronica di potenza. In questo contesto, i semiconduttori a larga banda, come il nitruro di gallio (GaN) …
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