Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures

This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \10DFET operation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Masselink, William Ted

Contributors dc:contributor

• Chang, Yia-Chung
• Morkoc, Hadis

• AlGaAs-GaAs heterointerfaces
• multiple quantum wells
• modulation-doped structures
• optical absorption coefficients
• exciton oscillator strengths

Statement dc:rights

• 1986 William Ted Masselink

Language dc:language

en

Identifier

978782

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25252