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Showing 1 to 16 of 16 for “"heterointerface"”.
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Mechanophore activation at heterointerface and surface crowdedness as a determining factor
… polymers. However, behavior of mechanophores at heterointerfaces is particularly interesting, as interfaces in composite materials are often the weakest point where damage-reporting and self-healing are applicable. To achieve this goal, a model system was constructed to allow facile synthesis and …
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Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures
… This ""damage"" takes the form of a ragged heterointerface with extensive dislocations and is observed for Some of the heterostructures examined. Other heterostructures are demonstrated that yield high-quality interfaces in TEM, which is corroborated by their performance as roomtemperature …
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Silicon-germanium nanowire heterojunctions: Optical and electrical properties
… of a Si_{1-x}Ge_x transition layer at the heterointerface creates a non-uniform strain and modifies the band structures of the adjacent Si and Ge nanowire segments. These nanostructures are produced by catalytic chemical vapor deposition employing vapor-liquid-solid mechanism on (111) …
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An investigation of heterojunction bipolar transistors by molecular beam epitaxy
… results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… investigates the material, optical, and heterointerface properties of ε-Ge/InₓGa₁₋ₓAs heterostructures on GaAs and Si substrates. The effect of strain on the heterointerface band alignment is comprehensively studied, demonstrating the ability to modulate the effective tunneling barrier …
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The design, analysis and characterization of high-performance heterostructure bipolar transistors
… either impeded or assisted. At the emitter-base heterointerface, a wide bandgap emitter presents a barrier to injection from the base, thereby permitting higher doping of the base and lower doping of the emitter for improved high-speed performance. In the base, the formation of an accelerating …
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Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures
… describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths …
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Optical properties of strain-engineered multilayer Si/SiGe nanostructures
… layer thicknesses, Ge compositions, and SiGe heterointerface abruptness. A comprehensive experimental and theoretical analysis of Raman scattering in various Si/Si_{1-x}Ge_xmultilayered nanostructures with well-defined Ge composition (x) and layer thicknesses is presented. Using Raman and …
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First principles Monte Carlo simulation of charge transport in semiconductors
… charge transport across a semi-conductor heterointerface. It has the advantage of increase predictive power due to its treatment of the detailed mixing between Bloch and Tamm electronic states in the interface region; this is of critical importance when a transmission or reflection is …
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Band Offset Measurements of ε-(InxGa1-x)2O3/AlN using X-ray Photoelectron Spectroscopy
… valence and conduction band offsets at the heterointerface. Through PLD growth optimization experiments, it was observed that moderate temperature (550 ℃), high oxygen pressure (1.25×10⁻² Torr), and high laser energy density (1.38 J cm-2) are essential for the deposition of the metastable …
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Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications
… tilt due to misfit dislocations at the Ge/Si heterointerface. Micro-Raman spectroscopic analysis further corroborated the strain-state of the Ge thin-film on Si. Cross-sectional transmission electron microscopy revealed the formation of a 90° Lomer dislocation network at the Ge/Si …
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… materials. Band alignments at source/channel heterointerface can be well modulated by carefully controlling the compositions of the InxGa1-xAs or GaAsySb1-y. In particular, this research systematically investigate the development and optimization of low-power TFETs using mixed As/Sb and …
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Defect-induced magnetism and transport phenomena in epitaxial oxides
… attempts at functionalising the conductive heterointerface by doping and inserting (anti)ferromagnetic layers are made.
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… of a two-dimensional electron gas (2DEG) at the heterointerface where carriers can reach very high mobility values. These properties can lead to the production of High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based …
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Exploiting polar interfaces for photocatalytic water splitting: application to the anatase-cuprous oxide heterojunction
… only several atomic layers on either side of the heterointerface the intersection of this polarity with finite size effects results in novel compensation mechanisms that can result in tunable surface chemistries suitable for enhanced photocatalysis. Finally, we study the water adsorption mechanism …