{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25252"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25252","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures","abstract":"This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \\10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \\10DFET operation.","abstract_html":"This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \\10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \\10DFET operation.","abstract_has_math":false,"creators":["Masselink, William Ted"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chang, Yia-Chung","Morkoc, Hadis"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-03T15:29:05Z","date_published":"2011-06-03T15:29:05Z","updated_at":"2026-07-22T22:25:24Z","subjects":["AlGaAs-GaAs heterointerfaces","multiple quantum wells","modulation-doped structures","optical absorption coefficients","exciton oscillator strengths"],"languages":["en"],"rights":["1986 William Ted Masselink"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["978782"],"render_values":[{"text":"978782","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25252","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chang, Yia-Chung","Morkoc, Hadis"]},{"key":"dc:creator","label":"Author","values":["Masselink, William Ted"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-03T15:29:05Z","10000-01-01","1986"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["AlGaAs-GaAs heterointerfaces","multiple quantum wells","modulation-doped structures","optical absorption coefficients","exciton oscillator strengths"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1986 William Ted Masselink"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["978782","http://hdl.handle.net/2142/25252"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \\10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \\10DFET operation.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T15:29:05Z No. of bitstreams: 1 1986_masselink.pdf: 6082452 bytes, checksum: a481e9f00f57efeba82ff64ac4213072 (MD5)","Made available in DSpace on 2011-06-03T15:29:05Z (GMT). No. of bitstreams: 1 1986_masselink.pdf: 6082452 bytes, checksum: a481e9f00f57efeba82ff64ac4213072 (MD5) Previous issue date: 1986","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T15:29:05Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:12:56-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures"]}]}],"canonical_facts":{"dc:contributor":["Chang, Yia-Chung","Morkoc, Hadis"],"dc:creator":["Masselink, William Ted"],"dc:date":["2011-06-03T15:29:05Z","10000-01-01","1986"],"dc:description":["This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \\10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \\10DFET operation.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T15:29:05Z No. of bitstreams: 1 1986_masselink.pdf: 6082452 bytes, checksum: a481e9f00f57efeba82ff64ac4213072 (MD5)","Made available in DSpace on 2011-06-03T15:29:05Z (GMT). No. of bitstreams: 1 1986_masselink.pdf: 6082452 bytes, checksum: a481e9f00f57efeba82ff64ac4213072 (MD5) Previous issue date: 1986","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T15:29:05Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:12:56-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"],"dc:identifier":["978782","http://hdl.handle.net/2142/25252"],"dc:language":["en"],"dc:rights":["1986 William Ted Masselink"],"dc:subject":["AlGaAs-GaAs heterointerfaces","multiple quantum wells","modulation-doped structures","optical absorption coefficients","exciton oscillator strengths"],"dc:title":["Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:24Z"}