Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures

This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by photoluminescence techniques in In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As/GaAs and Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As/GaAs quantum well systems. Photoluminescence is a useful nondestructive probe of direct-gap quantum structures because the exciton population responsible for the measured luminescence is sensitive to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Griffiths, Christopher Owen John

Contributors dc:contributor

• Klein, Miles V.

• Physics, Condensed Matter

Statement dc:rights

• Copyright 1994 Griffiths, Christopher Owen John

Language dc:language

eng

Identifier

AAI9512375
(UMI)AAI9512375

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23283