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Showing 1 to 20 of 33 for “"interface roughness"”.

  1. The Si/SiO2 Interface Roughness

    The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …

    uiuc Repository record for The Si/SiO2 Interface Roughness (opens in a new tab)

  2. The Si/SiO(2) Interface Roughness

    The Si/SiO$\sb2$ interface roughness has important effects on the performance of metal-oxide-semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …

    uiuc Repository record for The Si/SiO(2) Interface Roughness (opens in a new tab)

  3. Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy

    Si/SiO2 interface roughness has been related to the inversion layer carrier mobility degradation, gate dielectric reliability, gate leakage current, and ballistic transmittance, yet the quantitatively measurement of the Si/SiO2 interface has not been achieved at the nanometer scale. For the first …

    uiuc Repository record for Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy (opens in a new tab)

  4. Interface roughness mediated optical decay and carrier dynamics in type II AlAs/GaAs heterostructures

    Roughness at the interface between the well and barrier materials in quantum well systems has long been known to be an important factor determining carrier mobility in short period wells. Interface roughness (IR) has also been suggested as a possible decay mechanism in type II AlAs/GaAs …

    uiuc Repository record for Interface roughness mediated optical decay and carrier dynamics in type II AlAs/GaAs heterostructures (opens in a new tab)

  5. X-ray studies of gallium arsenide-silicon heterostructures

    … affects disorder within the film and at the interface. We employ x-ray scattering to explore the structural properties of these layered materials grown by molecular beam epitaxy. The thermal expansion of thick GaAs films on nominal Si(001) is measured with x-ray diffraction. The gallium …

    uiuc Repository record for X-ray studies of gallium arsenide-silicon heterostructures (opens in a new tab)

  6. MODELLING CELL POPULATION GROWTH

    … intermembrane friction on growth kinetics and interface roughness dynamics of epithelial tissue were studied. It is reported that with fine alterations of the mechanical parameters such as the cell-cell adhesion strength, one could reliably reproduce different interface roughness scaling …

    uwo Repository record for MODELLING CELL POPULATION GROWTH (opens in a new tab)

  7. Nanoscale structure and transport : from atoms to devices

    … (UTSOI) structures is presented and applied to interface roughness scattering in transistor channels. Self-consistent potentials and accurate wavefunctions and band structures allow for a direct link between measured electrical response and atomic structure. Atomic-scale interface roughness is …

    mit Repository record for Nanoscale structure and transport : from atoms to devices (opens in a new tab)

  8. Magnetotransport in low dimensional semiconductor structures

    … are always higher in the [233] direction. The interface roughness scattering is a possible cause of the mobility anisotropy. The electron focusing results demonstrate that the effective mass and Fermi surface are isotropic even through the mobility is anisotropic. An explanation is proposed …

    cambridge Repository record for Magnetotransport in low dimensional semiconductor structures (opens in a new tab)

  9. A study of surface roughness issues in magnetic tunnel junctions

    … coupling are greatly modified by introducing the interface roughness into the basic Ferromagnet/Insulator/Ferromagnet structure. Experimentally, the surface roughness of the Ni80Fe20 bottom electrode is controlled by applying an rf substrate bias during the deposition. Magnetic tunnel junction …

    nus Repository record for A study of surface roughness issues in magnetic tunnel junctions (opens in a new tab)

  10. Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures

    … strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.

    uiuc Repository record for Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures (opens in a new tab)

  11. Study of the training effect in exchange bias using the domain state model

    … model increasing the realism of this model. The interface roughness was introduced in the model, as more representative of realistic exchange bias systems. Furthermore, different crystallographic structures such as body-centered cubic and hexagonal-close packed, were investigated as in these …

    whiterose Repository record for Study of the training effect in exchange bias using the domain state model (opens in a new tab)

  12. Numerical investigation of load transfer mechanisms in slopes reinforced with piles

    … on piles in piled-slopes is sensitive to the interface roughness, pile spacing, modeling techniques, and constitutive model. For the 3-D model, which includes both the sliding and anchorage zones, the limit soil pressure calculated for the "flow" failure mode is approximately equal to that …

    missouri Repository record for Numerical investigation of load transfer mechanisms in slopes reinforced with piles (opens in a new tab)

  13. Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures

    … XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.

    uiuc Repository record for Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures (opens in a new tab)

  14. Exciton transport and thermodynamics in gallium arsenide quantum wells

    … the experimental results with a model based on interface-roughness scattering.

    uiuc Repository record for Exciton transport and thermodynamics in gallium arsenide quantum wells (opens in a new tab)

  15. Press fit design : force and torque testing of steel dowel pins in brass and nylon samples

    … press fit theory well suggesting that the interface pressure of the press fit can be accurately predicted by theory. The brass torque samples matched theory well once material yield conditions were taken into account. The creep sensitivity of the nylon samples made predictions over the …

    mit Repository record for Press fit design : force and torque testing of steel dowel pins in brass and nylon samples (opens in a new tab)

  16. Analysis of the electron transport properties in quantum cascade lasers

    … (e-e), electron-impurity (e-imp)and electron-interface roughness scattering. This thesis details the development and calculation results for different models for the electron transport in THz QCLs. Using a semi-classical Monte Carlo simulation, including e-e and e-LO-phonon scattering as well …

    mit Repository record for Analysis of the electron transport properties in quantum cascade lasers (opens in a new tab)

  17. Monte Carlo study of current variability in UTB SOI DG MOSFETs

    … scattering from phonons, Coulomb interactions, interface roughness and body thickness fluctuation. Here, the effect of the last scattering mechanism on the drive current is examined as it is considered a significant limitation to device performance for body thicknesses below 5 nm. A simulation …

    glasgow Repository record for Monte Carlo study of current variability in UTB SOI DG MOSFETs (opens in a new tab)

  18. Optical dielectric properties of YBa2Cu3O6+x and Ba1-xKxBiO

    … function of the surface and knowledge of the interface (roughness, geometry, surface layers, etc.). We have constructed a rotating analyzer ellipsometer (RAE) and modified it to allow measurement of samples significantly smaller than the extent of the incident beam (sample dimensions of about …

    uiuc Repository record for Optical dielectric properties of YBa2Cu3O6+x and Ba1-xKxBiO (opens in a new tab)

  19. Basal Stability of Braced Circular Excavations in Isotropic and Anisotropic Clays

    … depth (D), clay thickness (T), and soil-wall interface roughness (Rint) below the excavation. In the next phase of the study, the NGI-ADP anisotropic strength model was utilized. In this set of analyses, the anisotropy ratio (SuP/SuA), strength gradient (kH/Suo), initial mobilization ratio …

    uwo Repository record for Basal Stability of Braced Circular Excavations in Isotropic and Anisotropic Clays (opens in a new tab)

  20. Manufacturability of gallium arsenide/aluminum gallium arsenide lasers grown by molecular beam epitaxy

    … quality of $Al\sb{x}Ga\sb{1-x}As$ layers, the interface roughness, and the control of residual oxygen incorporation into the active region. Based on MBE growth experiments, a model for the incorporation, desorption and accumulation of oxygen during epitaxial growth of optical quality AlGaAs …

    uiuc Repository record for Manufacturability of gallium arsenide/aluminum gallium arsenide lasers grown by molecular beam epitaxy (opens in a new tab)

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