{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23283"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23283","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures","abstract":"This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by photoluminescence techniques in In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs and Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs quantum well systems. Photoluminescence is a useful nondestructive probe of direct-gap quantum structures because the exciton population responsible for the measured luminescence is sensitive to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.","abstract_html":"This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by photoluminescence techniques in In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs and Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs quantum well systems. Photoluminescence is a useful nondestructive probe of direct-gap quantum structures because the exciton population responsible for the measured luminescence is sensitive to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.","abstract_has_math":true,"creators":["Griffiths, Christopher Owen John"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Klein, Miles V."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:08:40Z","date_published":"2011-05-07T14:08:40Z","updated_at":"2026-07-22T22:25:21Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1994 Griffiths, Christopher Owen John"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512375","(UMI)AAI9512375"],"render_values":[{"text":"AAI9512375","href":null,"code":true},{"text":"(UMI)AAI9512375","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23283","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Klein, Miles V."]},{"key":"dc:creator","label":"Author","values":["Griffiths, Christopher Owen John"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:08:40Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Griffiths, Christopher Owen John"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512375","(UMI)AAI9512375","http://hdl.handle.net/2142/23283"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis discusses carrier dynamics of III-V semiconductor quantum well structures probed by photoluminescence techniques in In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs and Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs quantum well systems. Photoluminescence is a useful nondestructive probe of direct-gap quantum structures because the exciton population responsible for the measured luminescence is sensitive to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.","The strain study in Chapter 4 measured the strain in individual quantum wells (within In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs multiquantum well samples) by analyzing excitonic luminescence as a function of incident laser energy. These results led to the equilibrium strain model which describes strain due to lattice-mismatch being shared between well and barrier layers in strain-relaxed multiquantum well structures. The small feature study of Chapter 5 investigates the presence of an absorption dip in the photoluminescence spectra of an In$\\sb{0.10}$Ga$\\sb{0.90}$As single quantum well and five quantum well sample. The dip is explained by fast relaxation of mobile excitons from the barrier material into the quantum well layer. Chapter 6 investigates the effect of interface roughness on tunneling times between narrow well and wide well in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs asymmetric coupled quantum well structures.","Made available in DSpace on 2011-05-07T14:08:40Z (GMT). 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Photoluminescence is a useful nondestructive probe of direct-gap quantum structures because the exciton population responsible for the measured luminescence is sensitive to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.","The strain study in Chapter 4 measured the strain in individual quantum wells (within In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs multiquantum well samples) by analyzing excitonic luminescence as a function of incident laser energy. These results led to the equilibrium strain model which describes strain due to lattice-mismatch being shared between well and barrier layers in strain-relaxed multiquantum well structures. The small feature study of Chapter 5 investigates the presence of an absorption dip in the photoluminescence spectra of an In$\\sb{0.10}$Ga$\\sb{0.90}$As single quantum well and five quantum well sample. The dip is explained by fast relaxation of mobile excitons from the barrier material into the quantum well layer. Chapter 6 investigates the effect of interface roughness on tunneling times between narrow well and wide well in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As/GaAs asymmetric coupled quantum well structures.","Made available in DSpace on 2011-05-07T14:08:40Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512375.pdf: 4712795 bytes, checksum: b8f4e7d8b2b531a3c6abbb46a32618df (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:03:26Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:30:14-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9512375","(UMI)AAI9512375","http://hdl.handle.net/2142/23283"],"dc:language":["eng"],"dc:rights":["Copyright 1994 Griffiths, Christopher Owen John"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:21Z"}