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University of Illinois at Urbana-Champaign
Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides
Abstract
dc:description"Data are presented showing that ""deep,"" device-quality native oxide structures can be formed in selected areas in $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\sp\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations."
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Krames, Michael Ragan
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1995 Krames, Michael Ragan
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9624398
(UMI)AAI9624398 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22361