{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22361"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22361","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides","abstract":"\"Data are presented showing that \"\"deep,\"\" device-quality native oxide structures can be formed in selected areas in $\\rm Al\\sb{x}Ga\\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\\sp\\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations.\"","abstract_html":""Data are presented showing that ""deep,"" device-quality native oxide structures can be formed in selected areas in $\\rm Al\\sb{x}Ga\\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\\sp\\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations."","abstract_has_math":true,"creators":["Krames, Michael Ragan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:37:24Z","date_published":"2011-05-07T13:37:24Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1995 Krames, Michael Ragan"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9624398","(UMI)AAI9624398"],"render_values":[{"text":"AAI9624398","href":null,"code":true},{"text":"(UMI)AAI9624398","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22361","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Krames, Michael Ragan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:37:24Z","10000-01-01","1995"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1995 Krames, Michael Ragan"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9624398","(UMI)AAI9624398","http://hdl.handle.net/2142/22361"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"Data are presented showing that \"\"deep,\"\" device-quality native oxide structures can be formed in selected areas in $\\rm Al\\sb{x}Ga\\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\\sp\\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations.\"","Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.","Made available in DSpace on 2011-05-07T13:37:24Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9624398.pdf: 2638927 bytes, checksum: 8b36613f870c9f3e9555a52e7656df8a (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:06Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:26:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides"]}]}],"canonical_facts":{"dc:creator":["Krames, Michael Ragan"],"dc:date":["2011-05-07T13:37:24Z","10000-01-01","1995"],"dc:description":["\"Data are presented showing that \"\"deep,\"\" device-quality native oxide structures can be formed in selected areas in $\\rm Al\\sb{x}Ga\\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\\sp\\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations.\"","Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.","Made available in DSpace on 2011-05-07T13:37:24Z (GMT). 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