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Showing 1 to 20 of 50 for “"native oxide"”.
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Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces
The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established results on unoxidized material interfaces.
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Van der Waals Heterostructures and 2D Materials with Native Oxide for Emerging Electronic Applications
… paradigms, reliant on complementary metal-oxide-semiconductor (CMOS) transistors, are becoming more inadequate for meeting these emerging demands due to limitations imposed by materials characteristics and device architecture. To address this computational paradigm shift, an innovative …
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Investigation of the Chemical Evolution of InAs Native Oxide and Its Impact on the Surface Electronic Properties
<p>The evolution of compound semiconductor native oxides, formed under ambient conditions, remains poorly understood. Herein, we use XPS to study the evolution of the InAs native oxide using six samples with different surface preparation techniques. For times of exposure in ambient conditions …
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Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical …
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Native oxidation of aluminum-bearing III-V semiconductors with applications to edge- and surface-emitting lasers and to the stabilization of light emitting diodes
… $\rm Al\sb{x}Ga\sb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$\rm\sp\circ C$ to 500$\rm\sp\circ C.$ Some of the basic properties of the native oxide are described. These properties include the insulating and diffusion …
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Study of Copper Electrodeposition on Ruthenium Oxide Surfaces and Bimetallic Corrosion of Copper/Ruthenium in Gallic Acid Solution
… diffusion barrier, has three different kinds of oxides, which are native oxide, electrochemical reversible oxide and electrochemical irreversible oxide. Native oxide was formed by naturally exposed to air. Electrochemical reversible oxide was formed at lower anodic potential region, and …
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Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants
Copper (Cu) electrodeposition on ruthenium (Ru) oxides was studied due to important implications in semiconductor industry. Ruthenium, proposed as the copper diffusion barrier/liner material, has higher oxygen affinity to form different oxides. Three different oxides (the native oxide, reversible …
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Use of aluminum bearing III-V semiconductor native oxides for optical and current confinement in waveguides and lasers
… various laser and optical devices that utilize native oxidation of Al bearing III-V semiconductors to effect large lateral index steps. These large index steps are due to the low refractive index of the Al bearing native oxide (n $\sim$ 1.5), making possible the fabrication of high-quality …
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Substrate cleaning using a remote hydrogen rf-plasma
… used in semiconductor processing have a surface oxide layer (the so-called native oxide layer) and a hydrocarbon contamination layer that must be removed before growing an epitaxial film of good quality. In this work, low temperature remote rf-hydrogen plasma cleaning of II-VI and silicon …
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Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides
… presented showing that ""deep,"" device-quality native oxide structures can be formed in selected areas in $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering …
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Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers
… to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal …
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Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices
… 0.5) are converted into a stable native oxide at moderately elevated temperatures ($\sbsp{\sim}{>}400\ \sp\circ$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between …
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Passivation of III–V Nanowires Using Dielectrics Deposited by Atomic Layer Deposition
… affected by surface states [5]. Furthermore, the native oxide on InAs NWs contains trap sites for electrons and their energies lie in the InAs conduction band. Therefore, controlling the electrical characteristics of these III–V NWs via surface passivation and encapsulation will be essential for …
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SECONDARY ELECTRON SPECTROSCOPY INSIDE THE SCANNING ELECTRON MICROSCOPE AND ITS MATERIAL SCIENCE APPLICATIONS
… characterization possibilities: in-situ native oxide thickness measurements, mapping space-charge regions, characterising the dopant concentration of silicon wafers and junctions that agree well with conventional techniques. It does this by overcoming longstanding problems in the subject …
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The Effect of Ambient on Photoluminescence from GaN
… the sample in Aqua Regia and BOE to remove the native oxide layer. After etching, the PL intensity was very stable in vacuum, but substantially degraded in air ambient. In HCl vapor (low pH), the PL intensity increased as compared to air ambient, while in NH3 vapor (high pH) it decreased. The …
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Hydration-Induced Plasma Surface Modification of Aluminum Nanoparticles for Power Generation in Oxygen Deficient Environments
… The results introduce a method to modify the native oxide surface and a strategy to control energy release rates from metal particle combustion.
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Radiative properties of silicon related materials
… are taken into account. The thickness of the native oxide, silicon dioxide, must be taken into account as well as its orientation (front side versus back side). The effect of layering wafers one onto another is investigated. It is shown that all these parameters affect the optical properties, …
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Second-harmonic generation as a probe of chemically modified Si(111) surfaces and the initial oxidation of hydrogen terminated Si(111)
… surfaces as well as a Si(111) surface with a native oxide film is reported. The signal's intensity and modulation through a 360 ̕rotation, or rotational anisotropy, can be correlated with the substrate's chemical modification. The potential for SHG to be used as a probe for monitoring the …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
… the surface reaction, in situ ALD of aluminum oxide (A1₂O₃) on GaAs in MOCVD system was proposed. Isopropanol (IPA) was chosen as the oxygen source for A1₂O₃ ALD and the mechanism was investigated. Pure A120 3 thin film was obtained and no arsenic or gallium oxide was observed at the interface. …
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Development of graphene growth surfaces for III-V semiconductors
… and subsequently bonded to an alternative flexible substrate to fabricate optoelectronic devices. In this work, we fabricate GaAs thin films epitaxially on graphene coated substrates. I have shown that the CVD graphene grown on Cu, wet transferred to a GaAs substrate can be used as …
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