Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers

In the present work, a water vapor oxidation process is used to convert high Al-composition \rm Al\sb{x}Ga\sb{1-x}As and In\sb{0.5}(Al\sb{x}Ga\sb{1-x})\sb{0.5}P to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Maranowski, Steven Andrew

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1995 Maranowski, Steven Andrew

Language dc:language

eng

Identifier

AAI9624427
(UMI)AAI9624427

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19519