Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers
type: CreativeWork
description: In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\sb{x}Ga\sb{1-x}As\ and\ In\sb{0.5}(Al\sb{x}Ga\sb{1-x})\sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily.
abstract: In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\sb{x}Ga\sb{1-x}As\ and\ In\sb{0.5}(Al\sb{x}Ga\sb{1-x})\sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily.
author: Maranowski, Steven Andrew
language: eng
keywords: Engineering, Electronics and Electrical, Engineering, Materials Science
date published: 2011-05-07T12:10:02Z
date modified: 2026-07-22T22:25:14Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/19519