Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers
In the present work, a water vapor oxidation process is used to convert high Al-composition $\rm Al\sb{x}Ga\sb{1-x}As\ and\ In\sb{0.5}(Al\sb{x}Ga\sb{1-x})\sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily.
Engineering, Electronics and Electrical, Engineering, Materials Science
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign