Native oxidation of aluminum-bearing III-V semiconductors with applications to edge- and surface-emitting lasers and to the stabilization of light emitting diodes

In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga\sb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$\rm\sp\circ C$ to 500$\rm\sp\circ C.$ Some of the basic properties of the native oxide are described. These properties include the insulating and diffusion masking nature of the oxide as well as the anisotropic behavior of the oxidation process.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Richard, Timothy Allen

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1995 Richard, Timothy Allen

Language dc:language

eng

Identifier

AAI9543793
(UMI)AAI9543793

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22985