Operational characteristics and grating tuning of quantum well heterostructure lasers

Data are presented on Al$\sb{\rm y}$Ga$\sb{\rm 1-y}$As-GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile are shown to be continuous from the In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well (L$\sb{\rm z}\sim 125$ A, x $\sim 0.2)$ up into the surrounding GaAs quantum well (L$\sb{\rm z}\sim$ 430 A). Continuous (cw) 300 K tunable laser operation in the 8700-9700 A range ($\Delta\lambda\sim$ 1000 A, $\Delta$h$\nu\sim$ 150 meV) and pulsed tunable operation in the 8450-9750 A range ($\Delta\lambda\sim$ 1300 A, $\Delta$h$\nu\sim$ 200 meV) is demonstrated. The prospects for developing a high-power, broadly tunable, long-wavelength diode laser source are also discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Hall, Douglas Carleton

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1991 Hall, Douglas Carleton

Language dc:language

eng

Identifier

AAI9136609
(UMI)AAI9136609

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21410