Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 284 for “"Heterostructure"”.
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GaN-Based Heterogeneous Heterostructure Devices.
North Carolina State University Theses Electrical and Computer Engineering.
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Technology for SiGe heterostructure-based CMOS devices
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Fabrication of nanorod TiO2/CU2O heterostructure thin film
… cell application due to the limited area of the heterostructure for efficient charge collection. Therefore, nanorod structure has been suggested to overcome this problem. Nanorods provide stable electrodes and larger surface area for charge transfer reactions. This approach will attribute the …
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Coupled Quantum Well to Quantum Dot Heterostructure Laser
… single QD layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. (Abstract shortened by UMI.).
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A Universal Heterostructure for Photonic Integrated Circuit Applications
The issues involved in using a "universal heterostructure" technology for the fabrication of integrated waveguide photonic circuits are investigated using an optical 2 x 2 crossbar switch as a case study. The optical characteristics of slab waveguides are investigated as candidate "universal" …
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Physics and Simulation of High-Speed Heterostructure Devices
… of various GaAs/Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As heterostructure devices which have shown promise for both high-speed digital and microwave applications is examined. In particular, the following devices are studied in detail: high electron mobility transistor (HEMT), dual-channel high electron …
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Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers
The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.
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Variable temperature high-frequency response of heterostructure transistors
The development of high performance heterostructure transistors is essential for emerging opto-electronic integrated circuits (OEICs) and monolithic microwave integrated circuits (MMICs). Applications for OEICs and MMICs include the rapidly growing telecommunications and personal communications …
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III-V compositionally graded buffers for heterostructure integration
InyGa₁-yAs alloys are critical in commercial applications such as high speed transistors, light emitting diodes, solid state lasers, photovoltaics, and photo-detectors. However, the range of compositions used in these applications is often limited to the range of InyGa₁-yAs compositions which are …
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Electronic Defect Characterization of Strained-Si/SiGe/Si Heterostructure
North Carolina State University Theses Materials Science and Engineering.
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Leakage gate current in a heterostructure field effect transistor
… formulation for the leakage gate current in a heterostructure insulated-gate field effect transistor (HIGFET) is presented. Three important components of the leakage gate current, namely 2-D tunneling, 3-D tunneling and thermionic emission current, are considered. The conduction band edge …
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DC and AC modeling of heterostructure bipolar transistors (HBTS)
Starting with a homojunction or graded heterojunction bipolar transistor, a complete model for the dc and ac performances of the device is developed based on the Ebers-Moll methodology. The formulation is modified to include the abrupt single HBT, by introducing the effects of the conduction band …
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Nanoscale Engineering for Mixed-Dimensional Heterostructure Growth and Integration
… attempts to create van der Waals (vdW)-bonded heterostructures of distinct twodimensional (2D) crystals has opened new avenues for research, from the fundamental studies of emergent phenomena to the development of practical applications with unique functionalities, which are attributed to a …
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Heterostructure engineering of quantum dots-in-a-well infrared photodetectors
… as well as transport simulations of general heterostructure detectors with drift-diffusion model have been developed. The transport simulation results indicate the presence of a strong space charge region forming between the highly n-doped contact regions and non-intentionally doped barrier …
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Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy
… Si_{1-x}Ge_x on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect …
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Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs
In this thesis, GaAs heterostructure MOSFETs are investigated as a potential technology for digital circuit design. The devices under investigation are 0.6 μm gate length, enhancement mode, heterostructure MOSFETs, with a high-κ dielectric (Ga2O3), and an InGaAs channel. Historically silicon CMOS …
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Operational characteristics and grating tuning of quantum well heterostructure lasers
… x}$Ga$\sb{\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
This thesis covers research on the efficiency of green light emitting diodes (LEDs). The work presented focusses on the characterisation of conventional wurtzite (wz)-GaN based LEDs and novel zincblende (zb)-GaN based LEDs. The investigated wz-GaN based multiple quantum well structures have been …
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Heterostructure field effect transistors (HFETs) on the basis of Group III nitrides are increasingly gaining importance for the application as RF power amplifier devices. A common feature of the layer structure of such transistors is a GaN buffer which is usually deposited on non-native substrates, …
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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
… ohmic contacts to the wide bandgap heterostructures is difficult and as a result limits the overall device performance. In an effort to improve drain-source contacts, gate recessing through the use of low-damage inductively coupled plasma reactive ion etching was pursued. A wet …
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