DC and AC modeling of heterostructure bipolar transistors (HBTS)

Starting with a homojunction or graded heterojunction bipolar transistor, a complete model for the dc and ac performances of the device is developed based on the Ebers-Moll methodology. The formulation is modified to include the abrupt single HBT, by introducing the effects of the conduction band discontinuity at the base-emitter junction as an energy barrier for electrons flow resulting in transmission and reflection processes. Finally, using the same approach, the formulation is extended to the abrupt double HBT. The collector current as a function of collector-emitter voltage, the collector and base currents as a function of base-emitter voltage, the dc current gain as a function of collector current, the h parameters as a function of collector current, the ac current gain as a function of frequency, and finally the unity current gain cut-off frequency as a function of the collector current are calculated for various graded and abrupt, single and double AlGaAs/GaAs HBTs. The results are in good agreement with the reported data.

Name thesis:degree_name

Master of Science (MS)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor dc:publisher

University of Nevada, Las Vegas

Year

1996

Author dc:creator

• Arvandi, Roxana

Contributors dc:contributor

• Rama Venkat

Statement dc:rights

• IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Identifier

https://oasis.library.unlv.edu/rtds/823

OAI identifier oai:identifier

oai:oasis.library.unlv.edu:rtds-1822