Physics and Simulation of High-Speed Heterostructure Devices

In this thesis the transient and steady-state behavior of various GaAs/Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As heterostructure devices which have shown promise for both high-speed digital and microwave applications is examined. In particular, the following devices are studied in detail: high electron mobility transistor (HEMT), dual-channel high electron mobility transistor, velocity-modulation transistor, and real-space transfer (negative resistance field-effect transistor, charge injection transistor) transistors.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Kizilyalli, Isik Cem F.

Contributors dc:contributor

• Hess, Karl

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908733

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69413