{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21410"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21410","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Operational characteristics and grating tuning of quantum well heterostructure lasers","abstract":"Data are presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile are shown to be continuous from the In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (L$\\sb{\\rm z}\\sim 125$ A, x $\\sim 0.2)$ up into the surrounding GaAs quantum well (L$\\sb{\\rm z}\\sim$ 430 A). Continuous (cw) 300 K tunable laser operation in the 8700-9700 A range ($\\Delta\\lambda\\sim$ 1000 A, $\\Delta$h$\\nu\\sim$ 150 meV) and pulsed tunable operation in the 8450-9750 A range ($\\Delta\\lambda\\sim$ 1300 A, $\\Delta$h$\\nu\\sim$ 200 meV) is demonstrated. The prospects for developing a high-power, broadly tunable, long-wavelength diode laser source are also discussed.","abstract_html":"Data are presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile are shown to be continuous from the In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (L$\\sb{\\rm z}\\sim 125$ A, x $\\sim 0.2)$ up into the surrounding GaAs quantum well (L$\\sb{\\rm z}\\sim$ 430 A). Continuous (cw) 300 K tunable laser operation in the 8700-9700 A range ($\\Delta\\lambda\\sim$ 1000 A, $\\Delta$h$\\nu\\sim$ 150 meV) and pulsed tunable operation in the 8450-9750 A range ($\\Delta\\lambda\\sim$ 1300 A, $\\Delta$h$\\nu\\sim$ 200 meV) is demonstrated. The prospects for developing a high-power, broadly tunable, long-wavelength diode laser source are also discussed.","abstract_has_math":true,"creators":["Hall, Douglas Carleton"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:07:51Z","date_published":"2011-05-07T13:07:51Z","updated_at":"2026-07-22T22:25:17Z","subjects":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1991 Hall, Douglas Carleton"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9136609","(UMI)AAI9136609"],"render_values":[{"text":"AAI9136609","href":null,"code":true},{"text":"(UMI)AAI9136609","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21410","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Hall, Douglas Carleton"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:07:51Z","10000-01-01","1991"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1991 Hall, Douglas Carleton"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9136609","(UMI)AAI9136609","http://hdl.handle.net/2142/21410"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Data are presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile are shown to be continuous from the In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (L$\\sb{\\rm z}\\sim 125$ A, x $\\sim 0.2)$ up into the surrounding GaAs quantum well (L$\\sb{\\rm z}\\sim$ 430 A). Continuous (cw) 300 K tunable laser operation in the 8700-9700 A range ($\\Delta\\lambda\\sim$ 1000 A, $\\Delta$h$\\nu\\sim$ 150 meV) and pulsed tunable operation in the 8450-9750 A range ($\\Delta\\lambda\\sim$ 1300 A, $\\Delta$h$\\nu\\sim$ 200 meV) is demonstrated. The prospects for developing a high-power, broadly tunable, long-wavelength diode laser source are also discussed.","\"Other data are presented on the operational and thermal characteristics of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructure diode lasers grown on Si substrates. It is shown experimentally that \"\"junction-up\"\" operation (for diodes mounted with the junction side away from the heat sink and thus with the heat dissipated through the substrate) is enhanced for lasers on Si substrates. The higher thermal conductivity of Si reduces the measured thermal impedance of GaAs-on-Si lasers by $\\sim$40% compared to lasers on GaAs. Continuous 300 K operation for over 10 h is demonstrated for a junction-up GaAs-on-Si diode laser. The effects of naturally occurring microcracks on the optical and electrical properties and operational stability of these devices are discussed. Data are presented showing cw 300 K operation for over 17 h for a GaAs-on-Si diode laser with stress-relieving microcracks running parallel to and inside the active laser stripe. The maximum cw 300 K output power for these devices ($\\sim$30 mW/facet) is shown to be limited by catastrophic facet degradation rather than accelerated optical degradation of the crystal at higher power levels.\"","The low-temperature (77-200K) cw operational characteristics of these cw 300 K GaAs-on-Si QWH diode lasers are also examined. Operation is demonstrated for over 500 h with a junction temperature as high as $\\sim$200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that cw 300 K lifetimes longer than the previously demonstrated 17 h may be possible. The effects of the optical power level on the degradation rate are examined.","Made available in DSpace on 2011-05-07T13:07:51Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9136609.pdf: 3530675 bytes, checksum: f4ede4a7575d97ac17427bfd1d5ad1f0 (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:50:35Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:23:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Operational characteristics and grating tuning of quantum well heterostructure lasers"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Hall, Douglas Carleton"],"dc:date":["2011-05-07T13:07:51Z","10000-01-01","1991"],"dc:description":["Data are presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and gain profile are shown to be continuous from the In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (L$\\sb{\\rm z}\\sim 125$ A, x $\\sim 0.2)$ up into the surrounding GaAs quantum well (L$\\sb{\\rm z}\\sim$ 430 A). Continuous (cw) 300 K tunable laser operation in the 8700-9700 A range ($\\Delta\\lambda\\sim$ 1000 A, $\\Delta$h$\\nu\\sim$ 150 meV) and pulsed tunable operation in the 8450-9750 A range ($\\Delta\\lambda\\sim$ 1300 A, $\\Delta$h$\\nu\\sim$ 200 meV) is demonstrated. The prospects for developing a high-power, broadly tunable, long-wavelength diode laser source are also discussed.","\"Other data are presented on the operational and thermal characteristics of Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructure diode lasers grown on Si substrates. It is shown experimentally that \"\"junction-up\"\" operation (for diodes mounted with the junction side away from the heat sink and thus with the heat dissipated through the substrate) is enhanced for lasers on Si substrates. The higher thermal conductivity of Si reduces the measured thermal impedance of GaAs-on-Si lasers by $\\sim$40% compared to lasers on GaAs. Continuous 300 K operation for over 10 h is demonstrated for a junction-up GaAs-on-Si diode laser. The effects of naturally occurring microcracks on the optical and electrical properties and operational stability of these devices are discussed. Data are presented showing cw 300 K operation for over 17 h for a GaAs-on-Si diode laser with stress-relieving microcracks running parallel to and inside the active laser stripe. The maximum cw 300 K output power for these devices ($\\sim$30 mW/facet) is shown to be limited by catastrophic facet degradation rather than accelerated optical degradation of the crystal at higher power levels.\"","The low-temperature (77-200K) cw operational characteristics of these cw 300 K GaAs-on-Si QWH diode lasers are also examined. Operation is demonstrated for over 500 h with a junction temperature as high as $\\sim$200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that cw 300 K lifetimes longer than the previously demonstrated 17 h may be possible. The effects of the optical power level on the degradation rate are examined.","Made available in DSpace on 2011-05-07T13:07:51Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9136609.pdf: 3530675 bytes, checksum: f4ede4a7575d97ac17427bfd1d5ad1f0 (MD5) Previous issue date: 1991","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:50:35Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:23:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9136609","(UMI)AAI9136609","http://hdl.handle.net/2142/21410"],"dc:language":["eng"],"dc:rights":["Copyright 1991 Hall, Douglas Carleton"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter"],"dc:title":["Operational characteristics and grating tuning of quantum well heterostructure lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:17Z"}