Full-band Monte Carlo simulation of hot electrons in scaled silicon devices

"A full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped ""ground plane"" have been simulated. Different scaling techniques have been applied to the devices to see the effects on the electric field, the energy distributions of the electrons, and the drain, substrate, and gate currents. The locations of impact ionization events and injection into the gate oxide are examined. It is shown that simpler models cannot adequately predict hot carrier behavior at the channel lengths studied (below 0.3 μm) and that several strategies that are successful at suppressing the hot carrier population for longer channel lengths are not as useful when 0.1 μm channel lengths are approached. The effect of scaling on the programming of stacked-gate and split-gate flash memory devices was also studied. Predictions of hot carrier behavior in small MOSFETs and flash memory devices are made, and suggestions for device design are given."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Duncan, Amanda Watson

Contributors dc:contributor

• Ravaioli, Umberto

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1996 Duncan, Amanda Watson

Language dc:language

eng

Identifier

9780591198034
AAI9712263
(UMI)AAI9712263

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21293