B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride

The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be \rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036 (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052). The growth rate of $\rm Si\sb{1-x}Ge\sb{x}$ alloys R$\sb{\rm SiGe}$ decreases somewhat with increasing $\rm G\sb2H\sb6$ in the flux-limited growth mode while dramatically increasing $\rm R\sb{SiGe}$ in the surface-reaction-limited regime.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lu, Qing

Contributors dc:contributor

• Greene, Joseph E.

• Physics, Condensed Matter
• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Lu, Qing

Language dc:language

eng

Identifier

9780591088601
AAI9702589
(UMI)AAI9702589

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20336