Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 208 for “"MBE"”.
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MBE-grown long wavelength InGaAlAs/InP laser diodes
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Plasmonic and Superconducting Self-Assembled MBE Grown Indium Islands
Molecular beam epitaxy (MBE) grown metal has been a renewed area of interest recently in order to achieve high quality metal films or nanostructures for plasmonics. Recently MBE grown silver films have been shown to possess optical constants closer to that of intrinsic silver leading to lower …
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MBE growth and STM study of chalcogenide thin films
This dissertation focuses on the physics of ultra-thin films with properties influenced by their interface with the underlying substrate. Thin films have many interesting properties, of which the main one motivating the work here has been superconductivity. Studying 2D and quasi-2D systems is key …
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Processing and characterization of contacts on MBE-grown gallium nitride
Gallium nitride, a III-V compound semiconductor, is a good candidate for applications such as blue laser diodes and power devices due to its wide bandgap. One of the main challenges related to this compound is the growth of high quality crystals. If crystals with high level of purity are grown, the …
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MBE growth and investigation of (001) GaAs surfaces using SIMS
An MBE system has been designed and constructed. After identification and elimination of various problems, high mobility, Si-doped , n-tYfe GaAs has been grown with electron concentration from ~ 5 x 10[to the power of]15 cm[to the power of]-3 (u 77 ~ 30,000 cm[squared]/Vs) to a solubility limit at …
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The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
… processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: …
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Surface ordering of MBE grown 001 gallium(05) aluminum(05) arsenic: A theoretical study
The surface kinetics of MBE growth of 001 {dollar}Ga\sb{x}Al\sb{1-x}As{dollar} is studied theoretically using the stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are adsorption and surface migration. …
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Theoretical study of MBE growth of indium gallium arsenide semiconductor compound on gallium arsenide substrate
… semiconductor characteristics during the MBE growth which can achieve the best results to control the quality of growth. Growth modeling also is less expensive and faster than experiments. The wide variation in the band-gap and lattice constants between InAs and GaAs is a subject for a …
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Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)
… devices both detectors and light emitters by MBE growth and characterization of quantum dot nanostructures based on (Ga,In)(As,N) on GaAs (100) and misoriented GaAs (111)B substrates. As it is well known in the literature, recently quantum dot nanostructures have been subject of numerous …
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Crecimiento por MBE, fabricación y caracterización de láseres de AlGaAs/GaAs/InGaAs/GaAs (111B) para emisión óptica menor a 1 nanometro
… crecimiento por Epitaxia de Haces Moleculares (MBE) de estructuras de AlGaAS/GaAS/InGaAS de baja dimensionalidad sobre substratos de GaAs (111)B con vistas a su aplicación en el desarrollo de dispositivos optoelectrónicos de configuración guía-onda conlongitudes de onda de trabajo mayores a 1 …
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B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride
… Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with …
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Integrating Model Based Engineering and trade space exploration into naval acquisitions
… The concept of Model Based Engineering (MBE) is introduced as an approach that could move Navy Acquisition from document-centric to model-centric, enabling efficiency and confidence in design, as demonstrated by some industries. MBE is the practice of bridging models together from …
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Modeling By Example
… and error-prone. Modeling By Example (MBE) is a new tool designed to help programmers construct general models faster and without errors. Given an object model and an acceptable, or included, example, MBE generates near-hit and near-miss examples for the user to mark as included or not …
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Sulfurizing and selenizing metal films in ultra-high vacuum by hydride gas kinetic control
Molecular beam epitaxy (MBE) is an important, well-established method for creation of thin films. The addition of gaseous sources of hydrogen sulfide and hydrogen selenide is not currently a well-documented or common modification to such systems. While the thermodynamics of using such sources for …
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The eyelid and its role in contact lens discomfort
… and the effect of microblepharon exfoliation (MBE) on eyelid characteristics in contact lens discomfort were investigated. Upper lid-wiper epitheliopathy, lid parallel conjunctival folds, secretions quality, expressibility, foam at orifices and acini secretion reflectivity of meibomian glands, …
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Development of indium arsenide quantum dot solar cells for high conversion efficiency
… Three samples are grown for investigation, an MBE grown GaAs control cell, an MBE grown six-stack InAs QD solar cell, and an MOCVD grown three-stack InAs QD solar cell. Inductively coupled plasma (ICP) etch without Si3N4 sidewall passivation and wet etch using Si3N4 sidewall passivation are …
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Adaptive Laboratory Evolution of Scenedesmus obliquus for Increased Carbohydrate Content and Biomass Productivity
… the spring, summer, and winter months, with the MBE 509 and MBE 510 cultigens being produced after the summer and winter selection rounds, respectively. When evaluated in triplicate 800-mL bubble column reactors: MBE 509 (491 ± 42 mg/L-day, expressed as the mean of the time series ± SD) was 24% …
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Estimation of Global Solar Radiation from SAURAN stations using air temperature-based models Hargreaves and Samani and Clemence models
… Mean Percentage Error (MPE), Mean Bias Error (MBE), Root Mean Square (RMSE), Coefficient of Determination (R2) and t-statistical value (t). Both models obtained acceptable values of MBE, MPE, RMSE, R2 and t in KZH, NMU and UNV stations. Both models achieved the best values of MBE from 2014 to …
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Silicon molecular beam epitaxy
… techniques used in the growth and doping of Si-MBE layers prepared in a commercial molecular beam growth system and in the evaluation of their electrical and crystallographic properties. A number of technological problems associated with flux monitoring, the flaking of excess Si deposits and the …
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