{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20336"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20336","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride","abstract":"The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ as a function of T$\\sb{\\rm s}$ are well described by a model based upon dissociative $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Si(001)2 x 1 ($\\rm Ge\\sb2H\\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\\rm S\\sbsp{Si\\sb2H\\sb6}{Si} = 0.036\\ (S\\sbsp{Ge\\sb2H\\sb6}{Ge} = 0.052).$ The growth rate of $\\rm Si\\sb{1-x}Ge\\sb{x}$ alloys R$\\sb{\\rm SiGe}$ decreases somewhat with increasing $\\rm G\\sb2H\\sb6$ in the flux-limited growth mode while dramatically increasing $\\rm R\\sb{SiGe}$ in the surface-reaction-limited regime.","abstract_html":"The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ as a function of T$\\sb{\\rm s}$ are well described by a model based upon dissociative $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Si(001)2 x 1 ($\\rm Ge\\sb2H\\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be <span class=\"etd-inline-math\">\\rm S\\sbsp{Si\\sb2H\\sb6}{Si} = 0.036 (S\\sbsp{Ge\\sb2H\\sb6}{Ge} = 0.052).</span> The growth rate of $\\rm Si\\sb{1-x}Ge\\sb{x}$ alloys R$\\sb{\\rm SiGe}$ decreases somewhat with increasing $\\rm G\\sb2H\\sb6$ in the flux-limited growth mode while dramatically increasing $\\rm R\\sb{SiGe}$ in the surface-reaction-limited regime.","abstract_has_math":true,"creators":["Lu, Qing"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:36:19Z","date_published":"2011-05-07T12:36:19Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Physics, Condensed Matter","Engineering, Electronics and Electrical","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Lu, Qing"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591088601","AAI9702589","(UMI)AAI9702589"],"render_values":[{"text":"9780591088601","href":null,"code":true},{"text":"AAI9702589","href":null,"code":true},{"text":"(UMI)AAI9702589","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20336","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Lu, Qing"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:36:19Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter","Engineering, Electronics and Electrical","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Lu, Qing"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591088601","AAI9702589","(UMI)AAI9702589","http://hdl.handle.net/2142/20336"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ as a function of T$\\sb{\\rm s}$ are well described by a model based upon dissociative $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Si(001)2 x 1 ($\\rm Ge\\sb2H\\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\\rm S\\sbsp{Si\\sb2H\\sb6}{Si} = 0.036\\ (S\\sbsp{Ge\\sb2H\\sb6}{Ge} = 0.052).$ The growth rate of $\\rm Si\\sb{1-x}Ge\\sb{x}$ alloys R$\\sb{\\rm SiGe}$ decreases somewhat with increasing $\\rm G\\sb2H\\sb6$ in the flux-limited growth mode while dramatically increasing $\\rm R\\sb{SiGe}$ in the surface-reaction-limited regime.","B-doped Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)2 x 1$ films were grown on Si(001) and Ge(001) substrates by GS-MBE using $\\rm Si\\sb2H\\sb6,\\ Ge\\sb2H\\sb6$, and $\\rm B\\sb2H\\sb6.$ For constant $\\rm Si\\sb2H\\sb6$ and/or $\\rm Ge\\sb2H\\sb6$ fluxes, B concentrations $\\rm C\\sb{B}\\ (5\\times 10\\sp{16}-5\\times 10\\sp{19}\\ cm\\sp{-3})$ were found to increase linearly with increasing flux $\\rm B\\sb2H\\sb6$ at constant film growth temperatures T$\\rm\\sb{s}$ and to decrease exponentially with 1/T$\\sb{\\rm s}$ at constant $\\rm B\\sb2H\\sb6$ fluxes. $\\rm B\\sb2H\\sb6$ reactive sticking probabilities ranged from $\\simeq 6.4\\times 10\\sp{-4}$ at T$\\rm\\sb{s} = 600\\sp\\circ C$ to $1.4\\times 10\\sp{-3}$ at 950$\\sp\\circ$C for B doped Si(001) and from $8\\times10\\sp{-4}$ at 300$\\sp\\circ$C to $2\\times10\\sp{-5}$ at 400$\\sp\\circ$ for B doped Ge(001).","Structural analysis by in-situ reflection high energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were high-quality single crystals.","A comparison of quantitative secondary-ion mass spectrometry (SIMS) and temperature-dependent Hall-effect measurements showed that B was incorporated into substitutional electrically-active sites under all growth conditions investigated. SIMS B depth-profiles from modulation-doped samples were abrupt with no indication of surface segregation and $\\delta$-doped layers were grown. The hole drift mobility in fully-strained alloys was found to increase while the Hall mobility decreased with increasing Ge fraction yielding a Hall scattering factor $\\gamma$ which ranged from 0.77 for Si to 0.26 for alloys with x = 0.28. Room-temperature hole mobilities were equal to the best reported bulk $\\rm Si\\sb{1-x}Ge\\sb{x}{:}B$ values and ranged, with p = $2\\rm\\times 10\\sp{18}\\ cm\\sp{-3}$ for example, from 160 cm$\\rm\\sp2V\\sp{-1} s\\sp{-1}$ for x = 0.28 to 110 $\\rm cm\\sp2V\\sp{-1}s\\sp{-1}$ for x = 0.05 to 86 for pure Si.","Made available in DSpace on 2011-05-07T12:36:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702589.pdf: 5585817 bytes, checksum: 72a6e64592d45e19b011a8772916cb1a (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:43:12Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:52-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Lu, Qing"],"dc:date":["2011-05-07T12:36:19Z","10000-01-01","1996"],"dc:description":["The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ as a function of T$\\sb{\\rm s}$ are well described by a model based upon dissociative $\\rm Si\\sb2H\\sb6$ and $\\rm Ge\\sb2H\\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\\rm Si\\sb2H\\sb6$ on Si(001)2 x 1 ($\\rm Ge\\sb2H\\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\\rm S\\sbsp{Si\\sb2H\\sb6}{Si} = 0.036\\ (S\\sbsp{Ge\\sb2H\\sb6}{Ge} = 0.052).$ The growth rate of $\\rm Si\\sb{1-x}Ge\\sb{x}$ alloys R$\\sb{\\rm SiGe}$ decreases somewhat with increasing $\\rm G\\sb2H\\sb6$ in the flux-limited growth mode while dramatically increasing $\\rm R\\sb{SiGe}$ in the surface-reaction-limited regime.","B-doped Si(001), Ge(001), and $\\rm Si\\sb{1-x}Ge\\sb{x}(001)2 x 1$ films were grown on Si(001) and Ge(001) substrates by GS-MBE using $\\rm Si\\sb2H\\sb6,\\ Ge\\sb2H\\sb6$, and $\\rm B\\sb2H\\sb6.$ For constant $\\rm Si\\sb2H\\sb6$ and/or $\\rm Ge\\sb2H\\sb6$ fluxes, B concentrations $\\rm C\\sb{B}\\ (5\\times 10\\sp{16}-5\\times 10\\sp{19}\\ cm\\sp{-3})$ were found to increase linearly with increasing flux $\\rm B\\sb2H\\sb6$ at constant film growth temperatures T$\\rm\\sb{s}$ and to decrease exponentially with 1/T$\\sb{\\rm s}$ at constant $\\rm B\\sb2H\\sb6$ fluxes. $\\rm B\\sb2H\\sb6$ reactive sticking probabilities ranged from $\\simeq 6.4\\times 10\\sp{-4}$ at T$\\rm\\sb{s} = 600\\sp\\circ C$ to $1.4\\times 10\\sp{-3}$ at 950$\\sp\\circ$C for B doped Si(001) and from $8\\times10\\sp{-4}$ at 300$\\sp\\circ$C to $2\\times10\\sp{-5}$ at 400$\\sp\\circ$ for B doped Ge(001).","Structural analysis by in-situ reflection high energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, and reciprocal lattice mapping showed that all films were high-quality single crystals.","A comparison of quantitative secondary-ion mass spectrometry (SIMS) and temperature-dependent Hall-effect measurements showed that B was incorporated into substitutional electrically-active sites under all growth conditions investigated. SIMS B depth-profiles from modulation-doped samples were abrupt with no indication of surface segregation and $\\delta$-doped layers were grown. The hole drift mobility in fully-strained alloys was found to increase while the Hall mobility decreased with increasing Ge fraction yielding a Hall scattering factor $\\gamma$ which ranged from 0.77 for Si to 0.26 for alloys with x = 0.28. Room-temperature hole mobilities were equal to the best reported bulk $\\rm Si\\sb{1-x}Ge\\sb{x}{:}B$ values and ranged, with p = $2\\rm\\times 10\\sp{18}\\ cm\\sp{-3}$ for example, from 160 cm$\\rm\\sp2V\\sp{-1} s\\sp{-1}$ for x = 0.28 to 110 $\\rm cm\\sp2V\\sp{-1}s\\sp{-1}$ for x = 0.05 to 86 for pure Si.","Made available in DSpace on 2011-05-07T12:36:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702589.pdf: 5585817 bytes, checksum: 72a6e64592d45e19b011a8772916cb1a (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:43:12Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:52-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["9780591088601","AAI9702589","(UMI)AAI9702589","http://hdl.handle.net/2142/20336"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Lu, Qing"],"dc:subject":["Physics, Condensed Matter","Engineering, Electronics and Electrical","Engineering, Materials Science"],"dc:title":["B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}