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University of Illinois at Urbana-Champaign
Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma
Abstract
dc:descriptionA new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\sb2$O$\sb3$.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Agarwala, Sambhulal
- Contributors dc:contributor
-
- Greene, Joseph E.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1994 Agarwala, Sambhulal
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9512279
(UMI)AAI9512279 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/20069