Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma
A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\sb2$O$\sb3$.
University of Illinois - Urbana-Champaign
Networked Digital Library of Theses and Dissertations
University of Illinois at Urbana-Champaign