Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma
type: CreativeWork
description: A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\sb2$O$\sb3$.
abstract: A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\sb2$O$\sb3$.
author: Agarwala, Sambhulal
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2011-05-07T12:27:50Z
date modified: 2026-07-22T22:25:15Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/20069