{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20069"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20069","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma","abstract":"A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\\sb2$O$\\sb3$.","abstract_html":"A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\\sb2$O$\\sb3$.","abstract_has_math":true,"creators":["Agarwala, Sambhulal"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:27:50Z","date_published":"2011-05-07T12:27:50Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1994 Agarwala, Sambhulal"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512279","(UMI)AAI9512279"],"render_values":[{"text":"AAI9512279","href":null,"code":true},{"text":"(UMI)AAI9512279","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20069","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Agarwala, Sambhulal"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:27:50Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Agarwala, Sambhulal"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512279","(UMI)AAI9512279","http://hdl.handle.net/2142/20069"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\\sb2$O$\\sb3$.","Selective HBr etching has been applied as the gate-recess process in the fabrication of InAlAs/InGaAs heterostructure FETs. Since less RIE-induced damage was observed in delta-doped structures, delta-doping was employed in all InP-based HFETs. The dc and rf device parameters of a typical 0.75-$\\mu$m gate-length transistor compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique. An extrinsic current-gain cutoff frequency of 150 GHz is obtained for a typical 0.2 $\\mu$m gate-length HFET device that was fabricated using selective HBr gate recess process.","RIE-induced damage is characterized extensively using a variety of techniques such as AES, XPS, and SIMS analyses, Raman scattering, Hall measurements and Schottky characteristics. No significant degradation in surface properties is observed. The lattice damage in layer structures with 2DEG depth of greater than 20 nm was minimal. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs increases faster than the rate of introduction of damage. An exponential distribution of damage with 1/e penetration depth of about 7.8 nm has been obtained. The exponential distribution of defects suggests that either ion channeling or diffusion is the possible mechanism of defect production in regions deeper than the projected range.","Made available in DSpace on 2011-05-07T12:27:50Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512279.pdf: 4247136 bytes, checksum: 8db8dc7ad0bb969037094e2493160986 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:21Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:52-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Agarwala, Sambhulal"],"dc:date":["2011-05-07T12:27:50Z","10000-01-01","1994"],"dc:description":["A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$\\sb2$O$\\sb3$.","Selective HBr etching has been applied as the gate-recess process in the fabrication of InAlAs/InGaAs heterostructure FETs. Since less RIE-induced damage was observed in delta-doped structures, delta-doping was employed in all InP-based HFETs. The dc and rf device parameters of a typical 0.75-$\\mu$m gate-length transistor compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique. An extrinsic current-gain cutoff frequency of 150 GHz is obtained for a typical 0.2 $\\mu$m gate-length HFET device that was fabricated using selective HBr gate recess process.","RIE-induced damage is characterized extensively using a variety of techniques such as AES, XPS, and SIMS analyses, Raman scattering, Hall measurements and Schottky characteristics. No significant degradation in surface properties is observed. The lattice damage in layer structures with 2DEG depth of greater than 20 nm was minimal. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs increases faster than the rate of introduction of damage. An exponential distribution of damage with 1/e penetration depth of about 7.8 nm has been obtained. The exponential distribution of defects suggests that either ion channeling or diffusion is the possible mechanism of defect production in regions deeper than the projected range.","Made available in DSpace on 2011-05-07T12:27:50Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512279.pdf: 4247136 bytes, checksum: 8db8dc7ad0bb969037094e2493160986 (MD5) Previous issue date: 1994","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:21Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:52-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9512279","(UMI)AAI9512279","http://hdl.handle.net/2142/20069"],"dc:language":["eng"],"dc:rights":["Copyright 1994 Agarwala, Sambhulal"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}