Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering

Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified abrupt bends, and 3 dB transition lengths of $\sim$300 μm for S bends with a 100 μm offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

1989

Author dc:creator

• Swanson, Paul David

Contributors dc:contributor

• DeTemple, Thomas A.

• Engineering, Electronics and Electrical
• Physics, Optics

Statement dc:rights

• Copyright 1989 Swanson, Paul David

Language dc:language

eng

Identifier

AAI9011044
(UMI)AAI9011044

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19757