{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19757"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19757","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering","abstract":"Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\\sp\\circ$, for simple abrupt bends, and 7$\\sp\\circ$, for modified abrupt bends, and 3 dB transition lengths of $\\sim$300 $\\mu$m for S bends with a 100 $\\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.","abstract_html":"Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\\sp\\circ$, for simple abrupt bends, and 7$\\sp\\circ$, for modified abrupt bends, and 3 dB transition lengths of $\\sim$300 <span class=\"etd-inline-math\">&mu;</span>m for S bends with a 100 <span class=\"etd-inline-math\">&mu;</span>m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.","abstract_has_math":true,"creators":["Swanson, Paul David"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["DeTemple, Thomas A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1989,"date_issued":"1989","date_published":"1989","updated_at":"2026-07-22T22:25:14Z","subjects":["Engineering, Electronics and Electrical","Physics, Optics"],"languages":["eng"],"rights":["Copyright 1989 Swanson, Paul David"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011044","(UMI)AAI9011044"],"render_values":[{"text":"AAI9011044","href":null,"code":true},{"text":"(UMI)AAI9011044","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19757","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["DeTemple, Thomas A."]},{"key":"dc:creator","label":"Author","values":["Swanson, Paul David"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["1989","2011-05-07T12:17:34Z","10000-01-01"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Swanson, Paul David"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011044","(UMI)AAI9011044","http://hdl.handle.net/2142/19757"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\\sp\\circ$, for simple abrupt bends, and 7$\\sp\\circ$, for modified abrupt bends, and 3 dB transition lengths of $\\sim$300 $\\mu$m for S bends with a 100 $\\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.","Made available in DSpace on 2011-05-07T12:17:34Z (GMT). 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With 3 dB loss angles of 3$\\sp\\circ$, for simple abrupt bends, and 7$\\sp\\circ$, for modified abrupt bends, and 3 dB transition lengths of $\\sim$300 $\\mu$m for S bends with a 100 $\\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.","Made available in DSpace on 2011-05-07T12:17:34Z (GMT). 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