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Showing 1 to 12 of 12 for “"Buried Channel"”.

  1. Two-dimensional transient analysis of buried-channel charge-coupled devices

    … industry;In 1972, a new structure of CCD, called buried-channel charge-coupled device (BCCD) was proposed and it brought significant improvement of the transfer efficiency. In BCCD, the transfer process is basically two-dimensional and thus a two-dimensional analysis of the charge transport is …

    iastate Repository record for Two-dimensional transient analysis of buried-channel charge-coupled devices (opens in a new tab)

  2. Radiation damage effects in charge coupled devices

    … and Co60 gamma radiation on the operation of EEV buried channel charge coupled devices (CCDs) have been studied. This work was instigated by the need to qualify CCDs for the SLD vertex detector. However, the work is also relevant to other small signal, low noise applications. The results of the …

    brunel Repository record for Radiation damage effects in charge coupled devices (opens in a new tab)

  3. THE LATE QUATERNARY HISTORY OF THE RIVER ERME, SOUTH DEVON

    … common, with other rivers of the region, has a buried channel graded to c. -50m OD. The channel has been infilled with a variety of sediments, of which the top 6-7m have been analysed for this study. Augered cores have been collected from the modern floodplain and salt marsh areas in the lower …

    plymouth Repository record for THE LATE QUATERNARY HISTORY OF THE RIVER ERME, SOUTH DEVON (opens in a new tab)

  4. Charge control in acoustic charge transport devices

    … semiconductor, particularly GaAs, to create buried channel charge transfer devices capable of signal processing functions, especially transversal filtering. Charge control in ACT devices concerns the control and accounting of charge with the goal of preserving signal integrity. Two key …

    uiuc Repository record for Charge control in acoustic charge transport devices (opens in a new tab)

  5. Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering

    Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified …

    uiuc Repository record for Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering (opens in a new tab)

  6. Long and short term effects of X-rays on charge coupled devices

    EEV buried channel charge coupled devices (BC CDs) with technological variations have been studied with respect to their response to 70kVp X-rays. Process variations considered are the conventional BCCD, scintillator coated BCCDs ( (Gadox(Eu) and Csl(Tl)) and the inversion mode device. The work was …

    brunel Repository record for Long and short term effects of X-rays on charge coupled devices (opens in a new tab)

  7. Liquid crystal adaptive planar optical devices

    … by combining LCs with direct UV written buried channel waveguide and Bragg grating structures. It has been discovered that the hysteresis seen in previous LC tunable Bragg grating devices is due to a process known as the pincement transition. Pincement involves the transition from a …

    soton Repository record for Liquid crystal adaptive planar optical devices (opens in a new tab)

  8. The glacial geology of eastern Sheridan County, North Dakota

    … large quantities of shallow ground water. The buried channel of the ancient Knife River may also contain large amounts of ground water.</p> <p>Future economic growth of this are will depend partly of effective development of its large ground water resources and to a lesser degree on development …

    nodak Repository record for The glacial geology of eastern Sheridan County, North Dakota (opens in a new tab)

  9. Development of SiOxNy waveguides for integrated quantum photonics

    … a small footprint at a wavelength of 900 nm. Buried channel waveguides with a cross-section of 1.6 μm x 1.6 μm and a core (cladding) refractive index of 1.545 (1.505) were chosen. Second, following their fabrication with plasma-enhanced chemical vapour deposition, electron beam lithography, …

    cambridge Repository record for Development of SiOxNy waveguides for integrated quantum photonics (opens in a new tab)

  10. A ballistic transport model for HEMTs and III-V MOSFETs

    … model will only become more accurate as channel lengths are scaled down to 10 nm. We would like to investigate to what extent this is true in III-V MOSFETs, and also to study the impact of short channel effects and other parasitics inherent to a III-V design. To accomplish these goals, we …

    mit Repository record for A ballistic transport model for HEMTs and III-V MOSFETs (opens in a new tab)

  11. Characterization and mitigation of radiation damage on the Gaia Astrometric Field

    … the Full Well Capacity of the Supplementary Buried Channel, a part of every Gaia pixel that constrains the passage of faint signals away from the bulk of traps throughout the rest of the pixel. The Data Processing and Analysis Consortium (DPAC) is currently adopting a ’forward modelling’ …

    cambridge Repository record for Characterization and mitigation of radiation damage on the Gaia Astrometric Field (opens in a new tab)

  12. On-Chip Isotropic Microchannels for Cooling Three Dimensional Microprocessors

    … of three dimensionally independent on-chip microchannels using a CMOS-compatible single mask deep reactive ion etching (DRIE) process for cooling 3D ICs. Three dimensionally independent microchannels are fabricated by utilizing the RIE lag effect. This allows complex microchannel configurations …

    vt Repository record for On-Chip Isotropic Microchannels for Cooling Three Dimensional Microprocessors (opens in a new tab)