Persistent photoconductivity and deep levels in aluminum gallium indium phosphide

The quaternary material aluminum gallium indium prosphide (($\rm Al\sb{x}Ga\sb{1-x})\sb{y}In\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\rm Al\sb{x}Ga\sb{1-x})\sb{0.5}In\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Plano, Mary Anne

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1990 Plano, Mary Anne

Language dc:language

eng

Identifier

AAI9021743
(UMI)AAI9021743

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19258