{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19258"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19258","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Persistent photoconductivity and deep levels in aluminum gallium indium phosphide","abstract":"The quaternary material aluminum gallium indium prosphide (($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{y}In\\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{0.5}In\\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).","abstract_html":"The quaternary material aluminum gallium indium prosphide (($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{y}In\\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{0.5}In\\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).","abstract_has_math":true,"creators":["Plano, Mary Anne"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:01:57Z","date_published":"2011-05-07T12:01:57Z","updated_at":"2026-07-22T22:25:12Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1990 Plano, Mary Anne"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021743","(UMI)AAI9021743"],"render_values":[{"text":"AAI9021743","href":null,"code":true},{"text":"(UMI)AAI9021743","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19258","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Plano, Mary Anne"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:01:57Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Plano, Mary Anne"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9021743","(UMI)AAI9021743","http://hdl.handle.net/2142/19258"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The quaternary material aluminum gallium indium prosphide (($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{y}In\\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{0.5}In\\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).","It was found that the persistent photoconductivity in both the Se and Te doped samples is caused by a deep electron trap with an energy of 0.30 eV and a capture barrier energy of 0.18 eV. Both the persistent photoconductivity and the deep trap concentration are maximum at an Al composition of 0.5. The energies measured for the deep trap in this material are very similar to those reported for the DX center in Se doped and Te doped aluminum gallium arsenide (AlGaAs). This similarity and the observation of persistent photoconductivity indicate that this deep level is also a DX center.","Made available in DSpace on 2011-05-07T12:01:57Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021743.pdf: 3149155 bytes, checksum: 96d774c6be1a5a50421e96410c33cf1d (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:35:44Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:14:12-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Persistent photoconductivity and deep levels in aluminum gallium indium phosphide"]}]}],"canonical_facts":{"dc:contributor":["Stillman, Gregory E."],"dc:creator":["Plano, Mary Anne"],"dc:date":["2011-05-07T12:01:57Z","10000-01-01","1990"],"dc:description":["The quaternary material aluminum gallium indium prosphide (($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{y}In\\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\\rm Al\\sb{x}Ga\\sb{1-x})\\sb{0.5}In\\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).","It was found that the persistent photoconductivity in both the Se and Te doped samples is caused by a deep electron trap with an energy of 0.30 eV and a capture barrier energy of 0.18 eV. Both the persistent photoconductivity and the deep trap concentration are maximum at an Al composition of 0.5. The energies measured for the deep trap in this material are very similar to those reported for the DX center in Se doped and Te doped aluminum gallium arsenide (AlGaAs). This similarity and the observation of persistent photoconductivity indicate that this deep level is also a DX center.","Made available in DSpace on 2011-05-07T12:01:57Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021743.pdf: 3149155 bytes, checksum: 96d774c6be1a5a50421e96410c33cf1d (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:35:44Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:14:12-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9021743","(UMI)AAI9021743","http://hdl.handle.net/2142/19258"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Plano, Mary Anne"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Persistent photoconductivity and deep levels in aluminum gallium indium phosphide"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:12Z"}