Persistent photoconductivity and deep levels in aluminum gallium indium phosphide
The quaternary material aluminum gallium indium prosphide (($\rm Al\sb{x}Ga\sb{1-x})\sb{y}In\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In this thesis the persistent photoconductivity and related deep levels in ($\rm Al\sb{x}Ga\sb{1-x})\sb{0.5}In\sb{0.5}P$ were studied by capacitance versus temperature measurements and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with selenium (Se) and the other set was doped n-type with tellurium (Te).
Engineering, Electronics and Electrical, Physics, Condensed Matter, Engineering, Materials Science
University of Illinois - Urbana-Champaign
Networked Digital Library of Theses and Dissertations
University of Illinois at Urbana-Champaign