In situ power-loss estimation of IGBT modules

A fault detection and prediction method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the switching environment and the measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This thesis presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation, and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2021

Author dc:creator

• Jin, Qichen

Contributors dc:contributor

• Banerjee, Arijit

• IGBT
• real-time monitoring
• lifetime estimation

Statement dc:rights

• Copyright 2021 Qichen Jin

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/110870

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/110870