In situ power-loss estimation of IGBT modules
type: CreativeWork
description: A fault detection and prediction method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the switching environment and the measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This thesis presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation, and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.
abstract: A fault detection and prediction method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the switching environment and the measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This thesis presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation, and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.
author: Jin, Qichen
language: en
keywords: IGBT, real-time monitoring, lifetime estimation
date published: 2021-09-17T04:06:56Z
date modified: 2026-07-22T22:24:52Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/110870