The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric

In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Physics

Grantor

Texas State University-San Marcos

Year dc:date.issued

2008

Author dc:creator

• Yust, Brian

Advisor dc:contributor.advisor

• Golding, Terry

Committee members dc:contributor.committeemember

• Ventrice, Carl
• Spencer, Gregory

• MOSFET
• high-k dialectric
• breakdown
• charge pumping

Language dc:language.iso

en

Handle dc:identifier.uri

https://hdl.handle.net/10877/4011

OAI identifier oai:identifier

oai:digital.library.txst.edu:10877/4011