{"id":{"repo_id":"texas-state","oai_identifier":"oai:digital.library.txst.edu:10877/4011"},"canonical_url":"https://search.dev.ndltd.org/etd/texas-state/oai:digital.library.txst.edu:10877/4011","repository":{"repo_id":"texas-state","name":"Texas State University","base_url":"https://digital.library.txst.edu/server/oai/request"},"display":{"title":"The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric","abstract":"In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.","abstract_html":"In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.","abstract_has_math":false,"creators":["Yust, Brian"],"institution":"Texas State University-San Marcos","degree_name":"Master of Science","degree_level":"Masters","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":[],"advisors":["Golding, Terry"],"committee_chairs":[],"committee_members":["Ventrice, Carl","Spencer, Gregory"],"year":2008,"date_issued":"2008-05","date_published":"2008-05","updated_at":"2026-07-27T21:22:30Z","subjects":["MOSFET","high-k dialectric","breakdown","charge pumping"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10877/4011","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Golding, Terry"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Ventrice, Carl","Spencer, Gregory"]},{"key":"dc:creator","label":"Author","values":["Yust, Brian"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2012-02-24T10:20:27Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2012-02-24T10:20:27Z"]},{"key":"dc:date.issued","label":"Date","values":["2008-05"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Texas State University-San Marcos"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["MOSFET","high-k dialectric","breakdown","charge pumping"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10877/4011"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices."]},{"key":"dc:format","label":"Dc Format","values":["Text"]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["1 file (.pdf)"]},{"key":"dc:title","label":"Title","values":["The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric"]}]}],"canonical_facts":{"dc:contributor.advisor":["Golding, Terry"],"dc:contributor.committeemember":["Ventrice, Carl","Spencer, Gregory"],"dc:creator":["Yust, Brian"],"dc:date.accessioned":["2012-02-24T10:20:27Z"],"dc:date.available":["2012-02-24T10:20:27Z"],"dc:date.issued":["2008-05"],"dc:description.abstract":["In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices."],"dc:format":["Text"],"dc:format.medium":["1 file (.pdf)"],"dc:identifier.uri":["https://hdl.handle.net/10877/4011"],"dc:language.iso":["en"],"dc:subject":["MOSFET","high-k dialectric","breakdown","charge pumping"],"dc:title":["The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric"],"dc:type":["Thesis"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Texas State University-San Marcos"]},"updated_at":"2026-07-27T21:22:30Z"}