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Showing 1 to 20 of 55 for “"HfO2"”.
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
Hafnium Oxide based gate stacks are considered to be the potential candidates to replace SiO_2 in complementary metal-oxide-semiconductor (CMOS), as they reduce the gate leakage by over 100 times while keeping the device performance intact. Even though considerable performance improvement has been …
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HfO2 as gate dielectric on Si and Ge substrate
Hafnium oxide HfO_2 has been considered as an alternative to silicon dioxide SiO_2 in future nano-scale complementary metal-oxide-semiconductor (CMOS) devices since it provides the required capacitance at the reduced device size because of its high dielectric constant. HfO_2 films are currently …
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Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices
… presents characterization on three different HfO2-based ReRAM devices. Devices showed promising results, particularly when the device area was scaled down. ReRAM switching was shown to be filamentary due to the non-dependency on the device area. A one-time forming step is required to achieve …
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Doped HfO2 thin films: Engineering and Origins of its ferroelectric properties
… ferroelectricity in scalable and CMOS-compatible HfO2 thin film in which its polarisation amplifies with reduced thickness below 10-nm, ultrathin ferroelectric HfO2 thin films are subject to be harnessed for next-generation non-volatile memory (NVM) or neuromorphic computing devices. Therefore, …
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Phase equilibria, thermal expansion and symmetry relations within the HfO2-Ta2O5-TiO2-temperature system
… to the rapid production of the high temperature HfO2-Ta2O5-TiO2 phase diagrams is presented that highlights the combined use of: (i) in-situ high temperature X-ray diffraction (up to 3000 ˚C), (ii) Thermal expansion measurements (iii) extraction of atomic motifs with associated material symmetry …
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The high temperature structural evolution of hafnia
The transformations of HfO2 are often described as analogous with the transformations in ZrO2 because of the similar crystal structures; however the phase transformations in HfO2 occur at higher temperatures. Even though this phase transformation has been extensively studied in ZrO2 , the …
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Magnetic and Transport Properties of Oxide Thin Films
… rare earth doped oxides, particularly SnO2 and HfO2 thin films. Cr- and Fe-doped SnO2 films were deposited on Al2O3 substrates by pulsed-laser deposition. Xray- diffraction patterns (XRD) show that the films have rutile structure and grow epitaxially along the (101) plane. The diffraction peaks …
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Ferroelectric doped hafnium oxide and its application on electronic devices
… material. Recently, doped hafnium oxide (HfO2) has garnered attention with its excellent scalability, reliability, and compatibility with the current CMOS process. This thesis introduces two research projects aimed at improving the electrical properties of ferroelectric-doped HfO2 for …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
HfO2 have been under intense investigation for gate dielectric application into the 70 nm technology nodes and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and …
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Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures
… surface and the interface between GaN and Al2O3, HfO2 and GaON. The investigation of the effect of a heterojunction on the effective work function in a metal/high-? gate stack found that when a Ge/Si heterostructure on silicon is lightly doped and sufficiently thin, the work function can be …
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Multi-scale modelling of atomic layer deposition
… practically to deposit high-k materials like HfO2, ZrO2, and Al2O3 as gate oxides. ALD is a technique for producing conformal layers of material with nanometer-scale thickness, used commercially in non-planar electronics and increasingly in other areas of science and technology. ALD is a type …
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High-K MOSFETS with high mobility channels
… the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
… THE ISSUE OF LARGE RESISTANCE VARIATION IN HFO2-BASED REDOX RRAMS BY INCREASING THE MEMORY WINDOW AND/OR REDUCING THE VARIATION. USING CMOS AVAILABLE PROCESSES LIKE SILICIDATION AND ATOMIC LAYER DEPOSITION (ALD), SYSTEMATIC INVESTIGATIONS ON BOTTOM ELECTRODES AND SWITCHING CHARACTERISTICS OF …
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Choosing a gate dielectric for graphene based transistors
… for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical …
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Estudo da estabilidade termodinâmica de filmes ultrafinos de HfO/sub 2/ sobre Si
… de argônio e oxigênio, de filmes ultrafinos de HfO2 depositados pelo método de deposição química de organometálicos na fase vapor (MOCVD) sobre Si, contendo uma camada interfacial oxinitretada em NO (óxido nítrico). A caracterização foi realizada utilizando-se técnicas de análise por feixes de …
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Characterisation of Novel Resistive Switching Memory Devices
… used to analyse the device performance issues. HfO2 is one of the most matured metal-oxide materials in semiconductor industry and HfO2 RRAM shows promising potential in practical application. An RTN-based defect extraction technique is developed for the HfO2 devices to detect individual defect …
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Thermoelectric Properties of Zr0.5Hf0.5Ni1-xPdxSn0.99Sb0.01 and Effect of Nanoinclusions on Transport Properties of Half Heuslers
… (0≤x≤1). Also the role of NiO and HfO2 nanoinclusions in half –Heusler matrix were studied. The half Heusler samples were prepared by solid state reaction. Resistivity, Seebeck coefficient and thermal conductivity were measured for all samples over a temperature range from room …
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The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
… devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study …
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An investigation of high-k materials in metal-insulator-metal capacitor structures
… that the main crystalline phase is monoclinic HfO2 (k ~18). The scanning transmission electron microscopy (STEM) analysis reveals the presence of nanoparticles, located at the HfO2 grain boundaries. Based on energy-dispersive x-ray spectroscopy (EDX) analysis the nanoparticles are consistent …
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… both of which can induce device instability, in HfO2/InGaAs and Al2O3/InGaAs metal-oxidesemiconductor (MOS) structures was carried out with an emphasis on the characterization of border traps using capacitance-voltage (C-V) hysteresis measurement. The charge trapping is observed to be mainly a …
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