High-K MOSFETS with high mobility channels

This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing.

Author dc:creator

• HUANG JIDONG

• high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal