{"id":{"repo_id":"nus","oai_identifier":"oai:scholarbank.nus.edu.sg:10635/17601"},"canonical_url":"https://search.dev.ndltd.org/etd/nus/oai:scholarbank.nus.edu.sg:10635/17601","repository":{"repo_id":"nus","name":"National University of Singapore","base_url":"https://scholarbank.nus.edu.sg/oai/request"},"display":{"title":"High-K MOSFETS with high mobility channels","abstract":"This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing.","abstract_html":"This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing.","abstract_has_math":false,"creators":["HUANG JIDONG"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2007,"date_issued":"2007-09-20","date_published":"2007-09-20","updated_at":"2026-07-24T03:33:22Z","subjects":["high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["HUANG JIDONG"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2007-09-20"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/17601"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/0bbc05f6-99e6-4509-b7fa-d39d2a36d9a8/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing."]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["ee16b3f6b09f1d3f4cd2b0ab912b2f67","d7b947ac0e94e13122a46428fad6709d"]},{"key":"dc:title","label":"Title","values":["High-K MOSFETS with high mobility channels"]}]}],"canonical_facts":{"dc:creator":["HUANG JIDONG"],"dc:date.issued":["2007-09-20"],"dc:description.abstract":["This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing."],"dc:format.checksum.md5":["ee16b3f6b09f1d3f4cd2b0ab912b2f67","d7b947ac0e94e13122a46428fad6709d"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/0bbc05f6-99e6-4509-b7fa-d39d2a36d9a8/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/17601"],"dc:subject":["high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal"],"dc:title":["High-K MOSFETS with high mobility channels"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:33:22Z"}