A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs

This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.

Department dc:contributor.department

Engineering

Grantor dc:publisher

Georgia Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Grens, Curtis M.

Advisor dc:contributor.advisor

• Cressler, John D.

Committee members dc:contributor.committeemember

• Emmanouil M. Tentzeris
• Papapolymerou, John

• Impact ionization
• Avalanche multiplication
• BVCBO
• BVCEO
• Breakdown
• SiGe HBTs
• BiCMOS

Language dc:language.iso

en_US

Handle dc:identifier.uri

http://hdl.handle.net/1853/7124

OAI identifier oai:identifier

oai:repository.gatech.edu:1853/7124